IXFN170N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.018 Ω

Min Operating Temperature :

-55 °C

Maximum Operating Temperature :

+ 150 C

Width :

25.42 mm

Pin Count :

4

Rise Time :

29ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

Manufacturer :

IXYS

FET Type :

N-Channel

Lead Free :

Lead Free

Product :

Power MOSFET Modules

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

16 ns

Supplier Device Package :

SOT-227B

Vgs (Max) :

±20V

Pbfree Code :

yes

Tradename :

HiPerFET

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation (Max) :

890W (Tc)

Avalanche Energy Rating (Eas) :

5000 mJ

Case Connection :

Isolated

DS Breakdown Voltage-Min :

300 V

Number of Channels :

1 Channel

Length :

38.23 mm

Type :

Polar Power MOSFET HiPerFET

Rds On (Max) @ Id, Vgs :

18m Ω @ 85A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Continuous Drain Current (ID) :

138A

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

79 ns

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Product Type :

Discrete Semiconductor Modules

Max Power Dissipation :

890 W

Height :

12.22 mm

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Number of Terminations :

4

Number of Elements :

1

FET Feature :

--

Drain to Source Resistance :

18 mΩ

Drain Current-Max (Abs) (ID) :

138 A

Terminal Position :

UPPER

Published :

2008

Base Product Number :

IXFN170

Rds On Max :

18 mΩ

Transistor Element Material :

SILICON

Product Status :

Active

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Mounting Style :

Screw Mounts

Pulsed Drain Current-Max (IDM) :

500A

JESD-30 Code :

R-XUFM-X4

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Brand :

IXYS

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

138A Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Number of Pins :

4

Radiation Hardening :

No

ECCN Code :

EAR99

Max Operating Temperature :

150 °C

Number of Terminals :

4

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

300V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Terminal Finish :

Nickel (Ni)

Power Dissipation-Max (Abs) :

890 W

Qualification Status :

Not Qualified

Element Configuration :

Single

Drain to Source Breakdown Voltage :

300V

Power Dissipation-Max :

890W Tc

Power Dissipation :

890W

Series :

Polar™

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

RoHS :

Details

Input Capacitance :

20 nF

Product Category :

Discrete Semiconductor Modules