IXFN170N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminals :

4

Base Product Number :

IXFN170

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100 V

Fall Time (Typ) :

79 ns

Transistor Polarity :

N-Channel

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Series :

HiPerFET™

Terminal Position :

UPPER

Pulsed Drain Current-Max (IDM) :

680A

Power Dissipation-Max :

600W Tc

Factory Lead Time :

8 Weeks

Product Type :

Discrete Semiconductor Modules

Vgs(th) (Max) @ Id :

4V @ 8mA

Number of Terminations :

4

Brand :

IXYS

Reach Compliance Code :

Compliant

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-PUFM-X4

Gate Charge (Qg) (Max) @ Vgs :

515nC @ 10V

ECCN Code :

EAR99

Turn-Off Delay Time :

158 ns

Continuous Drain Current (ID) :

170A

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Chassis Mount

Length :

38.3 mm

Terminal Finish :

Nickel (Ni)

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Product Status :

Not For New Designs

Package / Case :

SOT-227-4, miniBLOC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

4

RoHS Status :

RoHS Compliant

FET Feature :

--

Package :

Tube

Product Category :

Discrete Semiconductor Modules

Published :

2000

Mount :

Chassis Mount

Drain-source On Resistance-Max :

0.01 Ω

Rds On (Max) @ Id, Vgs :

10m Ω @ 500mA, 10V

Vgs (Max) :

±20V

Package Shape :

RECTANGULAR

Drain Current-Max (Abs) (ID) :

170 A

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Width :

25.07 mm

Number of Channels :

1 Channel

Packaging :

Tube

Nominal Vgs :

4 V

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

600 W

Dual Supply Voltage :

100V

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Rise Time :

90ns

Height :

9.6 mm

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Tradename :

HyperFET

Supplier Device Package :

SOT-227B

Resistance :

10MOhm

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Power Dissipation (Max) :

600W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

600W

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified