IXFN170N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

100V

Drain to Source Voltage (Vdss) :

100V

Width :

25.07 mm

Drain Current-Max (Abs) (ID) :

170 A

Number of Pins :

3

FET Feature :

--

Turn-Off Delay Time :

158 ns

Factory Lead Time :

8 Weeks

Power Dissipation :

600W

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

515nC @ 10V

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

100V

Case Connection :

Isolated

Transistor Polarity :

N-Channel

Terminal Form :

UNSPECIFIED

Brand :

IXYS

Power Dissipation (Max) :

600W (Tc)

Rds On (Max) @ Id, Vgs :

10m Ω @ 500mA, 10V

Number of Terminals :

4

Base Product Number :

IXFN170

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Pin Count :

4

Published :

2000

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.01 Ω

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100 V

Threshold Voltage :

4V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Rise Time :

90ns

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Maximum Operating Temperature :

+ 150 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Chassis Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Nickel (Ni)

Series :

HiPerFET™

Package / Case :

SOT-227-4, miniBLOC

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

170A

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Product Status :

Not For New Designs

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Supplier Device Package :

SOT-227B

Nominal Vgs :

4 V

JESD-30 Code :

R-PUFM-X4

Power Dissipation-Max (Abs) :

600 W

Terminal Position :

UPPER

Pbfree Code :

yes

Package :

Tube

Surface Mount :

No

Length :

38.3 mm

Resistance :

10MOhm

Product Type :

Discrete Semiconductor Modules

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Chassis Mount

Power Dissipation-Max :

600W Tc

Gate to Source Voltage (Vgs) :

20V

Height :

9.6 mm

Fall Time (Typ) :

79 ns

Product Category :

Discrete Semiconductor Modules

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

680A

Tradename :

HyperFET

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Transistor Application :

SWITCHING