IXFN160N30T

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Mfr.Part #
IXFN160N30T
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 300V 130A SOT227B
Stock
290
In Stock :
290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Product Type :
Discrete Semiconductor Modules
Input Capacitance (Ciss) (Max) @ Vds :
28000pF @ 25V
Continuous Drain Current (ID) :
130A
Number of Elements :
1
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
335nC @ 10V
Package :
Tube
Mounting Type :
Chassis Mount
Length :
38.23 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
-
Width :
25.42 mm
Minimum Operating Temperature :
- 55 C
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
300V
Drain to Source Voltage (Vdss) :
300V
Supplier Device Package :
SOT-227B
ECCN Code :
EAR99
Tradename :
HiPerFET
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Rds On Max :
19 mΩ
Pulsed Drain Current-Max (IDM) :
440A
Packaging :
Tube
Mount :
Chassis Mount
Product Category :
Discrete Semiconductor Modules
Max Power Dissipation :
900 W
Transistor Polarity :
N-Channel
Product Status :
Active
Vgs(th) (Max) @ Id :
5V @ 8mA
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Terminal Form :
UNSPECIFIED
Terminal Finish :
Nickel (Ni)
Min Operating Temperature :
-55 °C
Product :
Power MOSFET Modules
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
19m Ω @ 60A, 10V
Published :
2009
Transistor Element Material :
SILICON
Terminal Position :
UPPER
JESD-30 Code :
R-PUFM-X4
Max Operating Temperature :
150 °C
Brand :
IXYS
Drain-source On Resistance-Max :
0.019Ohm
Rise Time :
38 ns
Package / Case :
SOT-227-4, miniBLOC
Pin Count :
4
Pbfree Code :
yes
Number of Channels :
1 Channel
Mounting Style :
Screw Mounts
Vgs (Max) :
±20V
Height :
12.22 mm
Avalanche Energy Rating (Eas) :
3000 mJ
Type :
GigaMOS Power MOSFET
Factory Lead Time :
30 Weeks
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
Power Dissipation (Max) :
900W (Tc)
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max :
900W Tc
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Case Connection :
Isolated
Series :
GigaMOS™
Input Capacitance :
28 nF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Base Product Number :
IXFN160
Datasheets
IXFN160N30T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN160N30T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Type:GigaMOS Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, IXFN160N30T pinout, IXFN160N30T datasheet PDF, IXFN160N30T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN160N30T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN160N30T


N-Channel Tube 19m Ω @ 60A, 10V ±20V 28000pF @ 25V 335nC @ 10V 300V SOT-227-4, miniBLOC

IXFN160N30T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 28000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 130A.There is no pulsed drain current maximum for this device based on its rated peak drain current 440A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFN160N30T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 440A.
a 300V drain to source voltage (Vdss)


IXFN160N30T Applications


There are a lot of IXYS
IXFN160N30T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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