IXFN150N15

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Mfr.Part #
IXFN150N15
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 150V 150A SOT227B
Stock
38,417
In Stock :
38,417

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
150A
Gate to Source Voltage (Vgs) :
20V
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Published :
2000
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
DS Breakdown Voltage-Min :
150 V
Packaging :
Tube
Surface Mount :
No
Weight :
44g
REACH SVHC :
No SVHC
Additional Feature :
AVALANCHE RATED
Configuration :
SINGLE WITH BUILT-IN DIODE
Width :
25.07mm
Avalanche Energy Rating (Eas) :
3000 mJ
Lead Free :
Lead Free
Base Product Number :
IXFN150
Termination :
Screw
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
110 ns
Mounting Type :
Chassis Mount
Drain to Source Voltage (Vdss) :
150V
Resistance :
12.5mOhm
Terminal Position :
UPPER
Mount :
Chassis Mount, Screw
Number of Terminals :
4
Package :
Tube
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
600A
Power Dissipation :
600W
Drain to Source Breakdown Voltage :
150V
Number of Elements :
1
Terminal Finish :
Nickel (Ni)
Power Dissipation (Max) :
600W (Tc)
Power Dissipation-Max :
600W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
UNSPECIFIED
Length :
38.2mm
Rise Time :
60ns
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Manufacturer :
IXYS Corporation
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
12.5m Ω @ 75A, 10V
Series :
HiPerFET™
JESD-30 Code :
R-PUFM-X4
Package / Case :
SOT-227-4, miniBLOC
Nominal Vgs :
4 V
FET Type :
N-Channel
Isolation Voltage :
2.5kV
Height :
9.6mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 8mA
Number of Pins :
3
Number of Terminations :
4
Dual Supply Voltage :
150V
Turn On Delay Time :
50 ns
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Pin Count :
4
Fall Time (Typ) :
45 ns
Case Connection :
Isolated
FET Feature :
--
Supplier Device Package :
SOT-227B
Product Status :
Obsolete
Drain-source On Resistance-Max :
0.0125 Ω
Datasheets
IXFN150N15
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN150N15 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Pins:3, Number of Terminations:4, IXFN150N15 pinout, IXFN150N15 datasheet PDF, IXFN150N15 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN150N15 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN150N15


N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V 150V SOT-227-4, miniBLOC

IXFN150N15 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 9100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 150A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFN150N15 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 600A.
a 150V drain to source voltage (Vdss)


IXFN150N15 Applications


There are a lot of IXYS
IXFN150N15 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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