IXFN150N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

150A

Weight :

44g

Supplier Device Package :

SOT-227B

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

600A

Surface Mount :

No

Power Dissipation (Max) :

600W (Tc)

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

150V

Length :

38.2mm

Package :

Tube

Drain-source On Resistance-Max :

0.0125 Ω

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

FET Feature :

--

Drain to Source Breakdown Voltage :

150V

Rise Time :

60ns

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Lead Free :

Lead Free

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 75A, 10V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Manufacturer :

IXYS Corporation

Vgs(th) (Max) @ Id :

4V @ 8mA

Mount :

Chassis Mount, Screw

Height :

9.6mm

Turn-Off Delay Time :

110 ns

Width :

25.07mm

Product Status :

Obsolete

Qualification Status :

Not Qualified

Pin Count :

4

REACH SVHC :

No SVHC

Terminal Finish :

Nickel (Ni)

Base Product Number :

IXFN150

JESD-30 Code :

R-PUFM-X4

Package / Case :

SOT-227-4, miniBLOC

Dual Supply Voltage :

150V

Power Dissipation-Max :

600W Tc

Number of Terminals :

4

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Turn On Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Resistance :

12.5mOhm

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Termination :

Screw

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™

Isolation Voltage :

2.5kV

Case Connection :

Isolated

Nominal Vgs :

4 V

Power Dissipation :

600W

Avalanche Energy Rating (Eas) :

3000 mJ

Reach Compliance Code :

Compliant

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

150 V

Terminal Form :

UNSPECIFIED

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

45 ns