IXFN150N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

560A

Power Dissipation-Max :

520W Tc

Product Status :

Not For New Designs

Gate to Source Voltage (Vgs) :

20V

Power Dissipation Ambient-Max :

520 W

Continuous Drain Current (ID) :

150A

Height :

9.6 mm

Pbfree Code :

yes

Number of Pins :

4

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

100V

Number of Terminals :

4

RoHS :

Details

Power Dissipation (Max) :

520W (Tc)

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

JESD-30 Code :

R-PUFM-X4

Surface Mount :

No

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

Discrete Semiconductor Modules

Drain Current-Max (Abs) (ID) :

150 A

Drain to Source Breakdown Voltage :

100V

Packaging :

Bulk

DS Breakdown Voltage-Min :

100 V

Drain-source On Resistance-Max :

0.012 Ω

Terminal Form :

UNSPECIFIED

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Chassis Mount

Supplier Device Package :

SOT-227B

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Turn-Off Delay Time :

100 ns

FET Type :

N-Channel

Power Dissipation :

520W

Factory Lead Time :

30 Weeks

Number of Elements :

1

Lead Free :

Lead Free

Length :

38.23 mm

Operating Temperature :

-55°C~150°C TJ

Published :

2000

Polarity/Channel Type :

N-Channel

Mounting Style :

Chassis Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Bulk

Minimum Operating Temperature :

- 55 C

Package / Case :

SOT-227-4, miniBLOC

Mount :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

150A Tc

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Transistor Polarity :

N-Channel

Width :

25.42 mm

Rise Time :

60ns

Brand :

IXYS

Number of Channels :

1 Channel

Pin Count :

4

Fall Time (Typ) :

60 ns

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Resistance :

12mOhm

Product Type :

Discrete Semiconductor Modules

Base Product Number :

IXFN150

Reach Compliance Code :

Compliant

Terminal Finish :

Nickel (Ni)

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

520 W

Series :

HiPerFET™

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

FET Feature :

--

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Current Rating :

150A

Vgs(th) (Max) @ Id :

4V @ 8mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED