IXFN150N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 8mA

Current Rating :

150A

Vgs (Max) :

±20V

JESD-30 Code :

R-PUFM-X4

Manufacturer :

IXYS

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Supplier Device Package :

SOT-227B

Rise Time :

60ns

Turn-Off Delay Time :

100 ns

Number of Pins :

4

Package Shape :

RECTANGULAR

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

560A

ECCN Code :

EAR99

Power Dissipation :

520W

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

Length :

38.23 mm

DS Breakdown Voltage-Min :

100 V

Terminal Position :

UPPER

Factory Lead Time :

30 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

150 A

Power Dissipation-Max (Abs) :

520 W

Terminal Finish :

Nickel (Ni)

Package / Case :

SOT-227-4, miniBLOC

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Package :

Bulk

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

520W (Tc)

Terminal Form :

UNSPECIFIED

Transistor Polarity :

N-Channel

Number of Terminals :

4

Power Dissipation Ambient-Max :

520 W

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Mount :

Chassis Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Bulk

Resistance :

12mOhm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

Discrete Semiconductor Modules

Product Category :

Discrete Semiconductor Modules

Drain-source On Resistance-Max :

0.012 Ω

Transistor Application :

SWITCHING

Width :

25.42 mm

RoHS Status :

Non-RoHS Compliant

FET Feature :

--

Number of Terminations :

4

Continuous Drain Current (ID) :

150A

Power Dissipation-Max :

520W Tc

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

RoHS :

Details

Series :

HiPerFET™

Height :

9.6 mm

Number of Elements :

1

Mounting Style :

Chassis Mount

Drain to Source Voltage (Vdss) :

100V

Voltage - Rated DC :

100V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Base Product Number :

IXFN150

Fall Time (Typ) :

60 ns

Product Status :

Not For New Designs