IXFN150N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

520W (Tc)

Fall Time (Typ) :

60 ns

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Qualification Status :

Not Qualified

Package :

Bulk

Power Dissipation-Max (Abs) :

520 W

Brand :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.012 Ω

Number of Pins :

4

Drain to Source Voltage (Vdss) :

100V

Resistance :

12mOhm

Published :

2000

Base Product Number :

IXFN150

JESD-30 Code :

R-PUFM-X4

Number of Terminals :

4

Continuous Drain Current (ID) :

150A

Drain to Source Breakdown Voltage :

100V

Minimum Operating Temperature :

- 55 C

Current Rating :

150A

FET Feature :

--

Packaging :

Bulk

Terminal Position :

UPPER

Mounting Type :

Chassis Mount

Gate to Source Voltage (Vgs) :

20V

Product Category :

Discrete Semiconductor Modules

Drain Current-Max (Abs) (ID) :

150 A

Surface Mount :

No

Number of Channels :

1 Channel

Height :

9.6 mm

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Product Type :

Discrete Semiconductor Modules

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Voltage - Rated DC :

100V

Series :

HiPerFET™

Power Dissipation :

520W

Product Status :

Not For New Designs

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100 V

Reach Compliance Code :

Compliant

Pin Count :

4

Number of Terminations :

4

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

560A

Power Dissipation-Max :

520W Tc

Package Shape :

RECTANGULAR

Mount :

Chassis Mount

Maximum Operating Temperature :

+ 150 C

RoHS Status :

Non-RoHS Compliant

RoHS :

Details

Number of Elements :

1

Power Dissipation Ambient-Max :

520 W

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Length :

38.23 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Width :

25.42 mm

Mounting Style :

Chassis Mount

Terminal Finish :

Nickel (Ni)

Vgs(th) (Max) @ Id :

4V @ 8mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Rise Time :

60ns

Turn-Off Delay Time :

100 ns

Supplier Device Package :

SOT-227B

Terminal Form :

UNSPECIFIED

Package / Case :

SOT-227-4, miniBLOC

Transistor Element Material :

SILICON