IXFN140N25T

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Mfr.Part #
IXFN140N25T
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 250V 120A SOT227B
Stock
31,692
In Stock :
31,692

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
120A
Length :
38.23 mm
Number of Terminations :
4
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Polarity/Channel Type :
N-Channel
Rise Time :
29 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Nickel
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
255nC @ 10V
Mounting Style :
Chassis Mount
Qualification Status :
Not Qualified
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 4mA
Reach Compliance Code :
Unknown
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
690W Tc
ECCN Code :
EAR99
Width :
25.42 mm
Operating Temperature :
-55°C~150°C TJ
Type :
GigaMOS HiperFET Power MOSFET
Pulsed Drain Current-Max (IDM) :
400A
Drain to Source Voltage (Vdss) :
250V
Number of Elements :
1
Terminal Position :
UPPER
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
Product Category :
Discrete Semiconductor Modules
Manufacturer :
IXYS
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Height :
12.22 mm
Packaging :
Tube
Power Dissipation (Max) :
690W (Tc)
Pin Count :
4
Surface Mount :
No
Mount :
Chassis Mount
Brand :
IXYS
RoHS :
Details
Rds On (Max) @ Id, Vgs :
17m Ω @ 60A, 10V
Number of Channels :
1 Channel
Avalanche Energy Rating (Eas) :
3000 mJ
Factory Lead Time :
30 Weeks
DS Breakdown Voltage-Min :
250V
Power Dissipation-Max (Abs) :
690 W
Drain-source On Resistance-Max :
0.017Ohm
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Series :
GigaMOS™ HiPerFET™
Terminal Form :
UNSPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
JESD-30 Code :
R-PUFM-X4
Drain Current-Max (Abs) (ID) :
120 A
Published :
2010
Case Connection :
Isolated
Number of Terminals :
4
Package / Case :
SOT-227-4, miniBLOC
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Type :
Discrete Semiconductor Modules
Base Product Number :
IXFN140
Datasheets
IXFN140N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN140N25T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Type:GigaMOS HiperFET Power MOSFET, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, IXFN140N25T pinout, IXFN140N25T datasheet PDF, IXFN140N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN140N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN140N25T


N-Channel Tube 17m Ω @ 60A, 10V ±20V 19000pF @ 25V 255nC @ 10V 250V SOT-227-4, miniBLOC

IXFN140N25T Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 19000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.A device can conduct a maximum continuous current of [120 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 250V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFN140N25T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 400A.
a 250V drain to source voltage (Vdss)


IXFN140N25T Applications


There are a lot of IXYS
IXFN140N25T applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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