IXFN140N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pin Count :

4

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2010

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

RoHS :

Details

Surface Mount :

No

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

4

Power Dissipation (Max) :

690W (Tc)

FET Type :

N-Channel

Continuous Drain Current (ID) :

120A

Supplier Device Package :

SOT-227B

Terminal Finish :

Nickel

Avalanche Energy Rating (Eas) :

3000 mJ

Pulsed Drain Current-Max (IDM) :

400A

Number of Channels :

1 Channel

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-227-4, miniBLOC

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

Mount :

Chassis Mount

Vgs(th) (Max) @ Id :

5V @ 4mA

Drain Current-Max (Abs) (ID) :

120 A

Type :

GigaMOS HiperFET Power MOSFET

Length :

38.23 mm

Drain to Source Voltage (Vdss) :

250V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Power Dissipation-Max (Abs) :

690 W

Mounting Style :

Chassis Mount

ECCN Code :

EAR99

Manufacturer :

IXYS

Tradename :

HiPerFET

JESD-30 Code :

R-PUFM-X4

Product Category :

Discrete Semiconductor Modules

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.017Ohm

Minimum Operating Temperature :

- 55 C

Product Type :

Discrete Semiconductor Modules

Base Product Number :

IXFN140

Brand :

IXYS

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

Rise Time :

29 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

690W Tc

Height :

12.22 mm

Series :

GigaMOS™ HiPerFET™

Factory Lead Time :

30 Weeks

Width :

25.42 mm