IXFN140N25T
- Mfr.Part #
- IXFN140N25T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 120A SOT227B
- Stock
- 31,692
- In Stock :
- 31,692
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 120A
- Length :
- 38.23 mm
- Number of Terminations :
- 4
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Mounting Type :
- Chassis Mount
- Supplier Device Package :
- SOT-227B
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 29 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Mounting Style :
- Chassis Mount
- Qualification Status :
- Not Qualified
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 690W Tc
- ECCN Code :
- EAR99
- Width :
- 25.42 mm
- Operating Temperature :
- -55°C~150°C TJ
- Type :
- GigaMOS HiperFET Power MOSFET
- Pulsed Drain Current-Max (IDM) :
- 400A
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Elements :
- 1
- Terminal Position :
- UPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Product Category :
- Discrete Semiconductor Modules
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Height :
- 12.22 mm
- Packaging :
- Tube
- Power Dissipation (Max) :
- 690W (Tc)
- Pin Count :
- 4
- Surface Mount :
- No
- Mount :
- Chassis Mount
- Brand :
- IXYS
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 60A, 10V
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Factory Lead Time :
- 30 Weeks
- DS Breakdown Voltage-Min :
- 250V
- Power Dissipation-Max (Abs) :
- 690 W
- Drain-source On Resistance-Max :
- 0.017Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Series :
- GigaMOS™ HiPerFET™
- Terminal Form :
- UNSPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PUFM-X4
- Drain Current-Max (Abs) (ID) :
- 120 A
- Published :
- 2010
- Case Connection :
- Isolated
- Number of Terminals :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- Discrete Semiconductor Modules
- Base Product Number :
- IXFN140
- Datasheets
- IXFN140N25T

N-Channel Tube 17m Ω @ 60A, 10V ±20V 19000pF @ 25V 255nC @ 10V 250V SOT-227-4, miniBLOC
IXFN140N25T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 19000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.A device can conduct a maximum continuous current of [120 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 250V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFN140N25T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 400A.
a 250V drain to source voltage (Vdss)
IXFN140N25T Applications
There are a lot of IXYS
IXFN140N25T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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