IXFN132N50P3
- Mfr.Part #
- IXFN132N50P3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 112A SOT227B
- Stock
- 1,284
- In Stock :
- 1,284
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- UPPER
- Mounting Type :
- Chassis Mount
- Product Category :
- Discrete Semiconductor Modules
- Power Dissipation-Max :
- 1500W Tc
- Power Dissipation (Max) :
- 1500W (Tc)
- Base Product Number :
- IXFN132
- Turn On Delay Time :
- 44 ns
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Published :
- 2011
- Configuration :
- Single
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SOT-227B
- ECCN Code :
- EAR99
- Number of Elements per Chip :
- 1
- Transistor Element Material :
- SILICON
- Tradename :
- HiPerFET
- Reach Compliance Code :
- Unknown
- Turn-Off Delay Time :
- 72 ns
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 112A
- Product :
- Power MOSFET Modules
- Power Dissipation :
- 1.5kW
- Package / Case :
- SOT-227-4, miniBLOC
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 330A
- Packaging :
- Tube
- Series :
- HiPerFET™, Polar3™
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- Discrete Semiconductor Modules
- Height :
- 9.6mm
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Rise Time :
- 9ns
- Type :
- HiPerFET
- Mount :
- Chassis Mount, Panel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 112A Tc
- Qualification Status :
- Not Qualified
- Width :
- 25.07mm
- Transistor Polarity :
- N-Channel
- Channel Type :
- N
- Mounting Style :
- Screw Mounts
- FET Feature :
- --
- Resistance :
- 39mOhm
- Element Configuration :
- Single
- Fall Time (Typ) :
- 8 ns
- Factory Lead Time :
- 20 Weeks
- Case Connection :
- Isolated
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 66A, 10V
- Length :
- 38.23mm
- Gate to Source Voltage (Vgs) :
- 30V
- Minimum Operating Temperature :
- -55 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Type :
- SOT-227
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Terminal Form :
- UNSPECIFIED
- Drain to Source Breakdown Voltage :
- 500V
- RoHS :
- Details
- Lead Free :
- Lead Free
- Continuous Drain Current Id :
- 112A
- Maximum Operating Temperature :
- +150 °C
- Number of Terminations :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 18600pF @ 25V
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Pins :
- 4
- Datasheets
- IXFN132N50P3

N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V SOT-227-4, miniBLOC
IXFN132N50P3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 18600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 112A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 72 ns.Its maximum pulsed drain current is 330A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 44 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFN132N50P3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 112A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a 500V drain to source voltage (Vdss)
IXFN132N50P3 Applications
There are a lot of IXYS
IXFN132N50P3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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