IXFN132N50P3

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Mfr.Part #
IXFN132N50P3
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 112A SOT227B
Stock
1,284
In Stock :
1,284

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
UPPER
Mounting Type :
Chassis Mount
Product Category :
Discrete Semiconductor Modules
Power Dissipation-Max :
1500W Tc
Power Dissipation (Max) :
1500W (Tc)
Base Product Number :
IXFN132
Turn On Delay Time :
44 ns
Transistor Application :
SWITCHING
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 8mA
Published :
2011
Configuration :
Single
Package :
Tube
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
SOT-227B
ECCN Code :
EAR99
Number of Elements per Chip :
1
Transistor Element Material :
SILICON
Tradename :
HiPerFET
Reach Compliance Code :
Unknown
Turn-Off Delay Time :
72 ns
Vgs (Max) :
±30V
Continuous Drain Current (ID) :
112A
Product :
Power MOSFET Modules
Power Dissipation :
1.5kW
Package / Case :
SOT-227-4, miniBLOC
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
330A
Packaging :
Tube
Series :
HiPerFET™, Polar3™
RoHS Status :
ROHS3 Compliant
Product Type :
Discrete Semiconductor Modules
Height :
9.6mm
Brand :
IXYS
Number of Channels :
1 Channel
Rise Time :
9ns
Type :
HiPerFET
Mount :
Chassis Mount, Panel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Current - Continuous Drain (Id) @ 25°C :
112A Tc
Qualification Status :
Not Qualified
Width :
25.07mm
Transistor Polarity :
N-Channel
Channel Type :
N
Mounting Style :
Screw Mounts
FET Feature :
--
Resistance :
39mOhm
Element Configuration :
Single
Fall Time (Typ) :
8 ns
Factory Lead Time :
20 Weeks
Case Connection :
Isolated
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Rds On (Max) @ Id, Vgs :
39m Ω @ 66A, 10V
Length :
38.23mm
Gate to Source Voltage (Vgs) :
30V
Minimum Operating Temperature :
-55 °C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Type :
SOT-227
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Avalanche Energy Rating (Eas) :
3000 mJ
Terminal Form :
UNSPECIFIED
Drain to Source Breakdown Voltage :
500V
RoHS :
Details
Lead Free :
Lead Free
Continuous Drain Current Id :
112A
Maximum Operating Temperature :
+150 °C
Number of Terminations :
4
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Manufacturer :
IXYS
Number of Elements :
1
Drain to Source Voltage (Vdss) :
500V
Number of Pins :
4
Datasheets
IXFN132N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Type:HiPerFET, Number of Terminations:4, Number of Pins:4, IXFN132N50P3 pinout, IXFN132N50P3 datasheet PDF, IXFN132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN132N50P3


N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V SOT-227-4, miniBLOC

IXFN132N50P3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 18600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 112A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 72 ns.Its maximum pulsed drain current is 330A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 44 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFN132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 112A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a 500V drain to source voltage (Vdss)


IXFN132N50P3 Applications


There are a lot of IXYS
IXFN132N50P3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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