IXFA7N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65 mm

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

800V

Configuration :

Single

Radiation Hardening :

No

Rise Time :

32ns

Transistor Element Material :

SILICON

Pin Count :

4

JESD-609 Code :

e3

Package :

Tube

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-263AB

Channel Mode :

Enhancement

Power Dissipation-Max :

200W Tc

Length :

10.41 mm

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 25V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

800V

Case Connection :

DRAIN

Terminal Position :

Single

Series :

HiPerFET™, PolarHT™

Package Shape :

RECTANGULAR

Mounting Style :

SMD/SMT

DS Breakdown Voltage-Min :

800 V

Pbfree Code :

yes

Vgs (Max) :

±30V

Turn-Off Delay Time :

55 ns

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

200W

Avalanche Energy Rating (Eas) :

300 mJ

Surface Mount :

yes

Element Configuration :

Single

Power Dissipation-Max (Abs) :

200 W

Gate to Source Voltage (Vgs) :

30V

Mount :

Surface Mount

Base Product Number :

IXFA7N80

RoHS :

Details

Number of Terminals :

2

Height :

4.83 mm

Drain Current-Max (Abs) (ID) :

7A

Manufacturer :

IXYS

Factory Lead Time :

30 Weeks

Supplier Device Package :

TO-263 (IXFA)

Published :

2006

Transistor Type :

1 N-Channel

Tradename :

HiPerFET

Product Status :

Active

Number of Channels :

1 Channel

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.44 Ω @ 3.5A, 10V

Continuous Drain Current (ID) :

7A

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

18 A

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Packaging :

Tube

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

200W (Tc)

Fall Time (Typ) :

24 ns

Drain-source On Resistance-Max :

1.44 Ω

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED