IXFA7N60P3

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Mfr.Part #
IXFA7N60P3
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 7A TO263
Stock
4,632
In Stock :
4,632

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
4
Mounting Style :
SMD/SMT
Number of Elements :
1
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
400 mJ
Transistor Polarity :
N-Channel
Drain to Source Resistance :
1.15 Ω
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
13.3nC @ 10V
Case Connection :
DRAIN
Published :
2013
Continuous Drain Current (ID) :
7A
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±30V
Power Dissipation-Max (Abs) :
180 W
Product Type :
MOSFET
Mount :
Surface Mount
Manufacturer :
IXYS
Series :
HiPerFET™, Polar3™
Min Operating Temperature :
-55 °C
DS Breakdown Voltage-Min :
600V
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Package :
Tube
Terminal Finish :
Matte Tin (Sn)
Supplier Device Package :
TO-263 (IXFA)
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
705pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Product Category :
MOSFET
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
7A
RoHS :
Compliant
Package Shape :
RECTANGULAR
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
600V
JEDEC-95 Code :
TO-263AB
Vgs(th) (Max) @ Id :
5V @ 1mA
Reach Compliance Code :
not_compliant
Product Status :
Obsolete
Tradename :
HiPerFET
Terminal Form :
Gull wing
Brand :
IXYS
Number of Terminations :
2
Max Power Dissipation :
180 W
Drain-source On Resistance-Max :
1.15 Ω
Input Capacitance :
705 pF
Number of Terminals :
2
Factory Lead Time :
8 Weeks
Max Operating Temperature :
150 °C
Rds On (Max) @ Id, Vgs :
1.15 Ω @ 3.5A, 10V
Base Product Number :
IXFA7N60
Power Dissipation (Max) :
180W (Tc)
Rds On Max :
1.15 Ω
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM) :
16A
Surface Mount :
yes
Power Dissipation-Max :
180W Tc
Transistor Application :
SWITCHING
Datasheets
IXFA7N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXFA7N60P3 pinout, IXFA7N60P3 datasheet PDF, IXFA7N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA7N60P3


N-Channel Tube 1.15 Ω @ 3.5A, 10V ±30V 705pF @ 25V 13.3nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA7N60P3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The maximum input capacitance of this device is 705pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.As shown in the table below, the drain current of this device is 7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 16A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.15 Ω.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFA7N60P3 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 16A.
single MOSFETs transistor is 1.15 Ω
a 600V drain to source voltage (Vdss)


IXFA7N60P3 Applications


There are a lot of IXYS
IXFA7N60P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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