IXFA7N60P3

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Mfr.Part #
IXFA7N60P3
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 7A TO263
Stock
4,632
In Stock :
4,632

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
7A
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
1.15 Ω @ 3.5A, 10V
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Series :
HiPerFET™, Polar3™
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Drain to Source Resistance :
1.15 Ω
Pulsed Drain Current-Max (IDM) :
16A
Surface Mount :
yes
Mounting Type :
Surface Mount
Brand :
IXYS
Base Product Number :
IXFA7N60
Gate Charge (Qg) (Max) @ Vgs :
13.3nC @ 10V
Power Dissipation-Max :
180W Tc
Published :
2013
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Tradename :
HiPerFET
DS Breakdown Voltage-Min :
600V
Supplier Device Package :
TO-263 (IXFA)
JESD-609 Code :
e3
Reach Compliance Code :
not_compliant
Package :
Tube
JEDEC-95 Code :
TO-263AB
Input Capacitance :
705 pF
Number of Terminals :
2
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Product Status :
Obsolete
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount :
Surface Mount
Max Operating Temperature :
150 °C
Transistor Application :
SWITCHING
Pin Count :
4
Avalanche Energy Rating (Eas) :
400 mJ
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
705pF @ 25V
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max (Abs) :
180 W
Mounting Style :
SMD/SMT
Drain-source On Resistance-Max :
1.15 Ω
FET Type :
N-Channel
Power Dissipation (Max) :
180W (Tc)
Vgs(th) (Max) @ Id :
5V @ 1mA
RoHS :
Compliant
Package Shape :
RECTANGULAR
Max Power Dissipation :
180 W
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
7A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
600V
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Min Operating Temperature :
-55 °C
Factory Lead Time :
8 Weeks
Rds On Max :
1.15 Ω
RoHS Status :
ROHS3 Compliant
Datasheets
IXFA7N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXFA7N60P3 pinout, IXFA7N60P3 datasheet PDF, IXFA7N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA7N60P3


N-Channel Tube 1.15 Ω @ 3.5A, 10V ±30V 705pF @ 25V 13.3nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA7N60P3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The maximum input capacitance of this device is 705pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.As shown in the table below, the drain current of this device is 7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 16A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.15 Ω.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFA7N60P3 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 16A.
single MOSFETs transistor is 1.15 Ω
a 600V drain to source voltage (Vdss)


IXFA7N60P3 Applications


There are a lot of IXYS
IXFA7N60P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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