IXFA7N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Packaging :

Tube

Number of Terminations :

2

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2590pF @ 25V

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

18A

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

300W (Tc)

Product Type :

MOSFET

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Surface Mount :

yes

Drain-source On Resistance-Max :

1.9 Ω

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation-Max (Abs) :

300 W

Length :

9.65 mm

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS :

Details

Case Connection :

DRAIN

Package :

Tube

Number of Pins :

3

Pin Count :

4

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

6V @ 1mA

Continuous Drain Current (ID) :

7A

Width :

10.41 mm

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Rise Time :

49 ns

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-263AB

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

300 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

7A

Channel Type :

N Channel

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

Power Dissipation :

300W

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

300W Tc

Product Status :

Active

Supplier Device Package :

TO-263 (IXFA)

DS Breakdown Voltage-Min :

1000V

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

7A Tc

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.5A, 10V

Factory Lead Time :

30 Weeks

Series :

HiPerFET™, PolarP2™

Channel Mode :

Enhancement

Continuous Drain Current Id :

7A

Height :

4.83 mm

Qualification :

-

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Type :

Polar HiPerFET Power MOSFET

Number of Elements :

1

Number of Terminals :

2

Mounting Type :

Surface Mount

Mounting Style :

SMD/SMT

FET Type :

N-Channel

Base Product Number :

IXFA7N100

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

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