IXFA7N100P

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Mfr.Part #
IXFA7N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 7A TO263
Stock
2,362
In Stock :
2,362

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Tradename :
HiPerFET
Mounting Style :
SMD/SMT
Factory Lead Time :
30 Weeks
FET Feature :
--
Terminal Form :
Gull wing
Drain-source On Resistance-Max :
1.9 Ω
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
300W (Tc)
FET Type :
N-Channel
Height :
4.83 mm
Type :
Polar HiPerFET Power MOSFET
Pulsed Drain Current-Max (IDM) :
18A
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
1000V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
4
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Supplier Device Package :
TO-263 (IXFA)
Drain Current-Max (Abs) (ID) :
7A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
JEDEC-95 Code :
TO-263AB
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Package Shape :
RECTANGULAR
Number of Terminations :
2
Published :
2014
Width :
10.41 mm
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSSO-G2
Power Dissipation :
300W
Packaging :
Tube
Maximum Operating Temperature :
+ 150 C
Qualification :
-
Pbfree Code :
yes
Power Dissipation-Max (Abs) :
300 W
Continuous Drain Current (ID) :
7A
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3.5A, 10V
Length :
9.65 mm
Qualification Status :
Not Qualified
Number of Pins :
3
Base Product Number :
IXFA7N100
Product Status :
Active
Mount :
Surface Mount
Brand :
IXYS
Surface Mount :
yes
Power Dissipation-Max :
300W Tc
Continuous Drain Current Id :
7A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Number of Terminals :
2
Reach Compliance Code :
not_compliant
Channel Type :
N Channel
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
2590pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Rise Time :
49 ns
Product Type :
MOSFET
Series :
HiPerFET™, PolarP2™
Vgs (Max) :
±30V
Terminal Finish :
Matte Tin (Sn)
Drain to Source Voltage (Vdss) :
1000V
RoHS :
Details
Vgs(th) (Max) @ Id :
6V @ 1mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
300 mJ
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N100P from Chip IC,where excellence meets affordability. This product stands out with its Type:Polar HiPerFET Power MOSFET, Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, IXFA7N100P pinout, IXFA7N100P datasheet PDF, IXFA7N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA7N100P


N-Channel Tube 1.9 Ω @ 3.5A, 10V ±30V 2590pF @ 25V 47nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA7N100P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2590pF @ 25V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 7A.A maximum pulsed drain current of 18A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA7N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 18A.
a 1000V drain to source voltage (Vdss)


IXFA7N100P Applications


There are a lot of IXYS
IXFA7N100P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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