IXFA7N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

18A

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Product Type :

MOSFET

Polarity/Channel Type :

N-Channel

Power Dissipation :

300W

Pin Count :

4

Width :

10.41 mm

Transistor Application :

SWITCHING

Series :

HiPerFET™, PolarP2™

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

30 Weeks

Additional Feature :

AVALANCHE RATED

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2590pF @ 25V

JEDEC-95 Code :

TO-263AB

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Rise Time :

49 ns

Package :

Tube

Avalanche Energy Rating (Eas) :

300 mJ

Qualification Status :

Not Qualified

Length :

9.65 mm

Power Dissipation (Max) :

300W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Product Number :

IXFA7N100

Manufacturer :

IXYS

Continuous Drain Current Id :

7A

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

1000V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

2

Number of Pins :

3

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

1000V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

300 W

Product Status :

Active

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

6V @ 1mA

Channel Mode :

Enhancement

Tradename :

HiPerFET

Qualification :

-

Supplier Device Package :

TO-263 (IXFA)

RoHS :

Details

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Vgs (Max) :

±30V

Reach Compliance Code :

not_compliant

Mounting Style :

SMD/SMT

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Type :

N Channel

FET Type :

N-Channel

Packaging :

Tube

Published :

2014

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

300W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

7A

Number of Terminations :

2

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.5A, 10V

Type :

Polar HiPerFET Power MOSFET

Product Category :

MOSFET

Brand :

IXYS

Height :

4.83 mm

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

1.9 Ω

Drain Current-Max (Abs) (ID) :

7A