IXFA76N15T2
- Mfr.Part #
- IXFA76N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 76A TO263AA
- Stock
- 20,286
- In Stock :
- 20,286
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 97nC @ 10V
- FET Feature :
- --
- Mounting Style :
- SMD/SMT
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.02Ohm
- Series :
- HiPerFET™, TrenchT2™
- Pulsed Drain Current-Max (IDM) :
- 200A
- RoHS :
- Details
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Base Product Number :
- IXFA76
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 76A
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 38A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Factory Lead Time :
- 30 Weeks
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation (Max) :
- 350W (Tc)
- Supplier Device Package :
- TO-263AA
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Reach Compliance Code :
- not_compliant
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 150V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Package :
- Tube
- JEDEC-95 Code :
- TO-263AA
- DS Breakdown Voltage-Min :
- 150V
- Product Category :
- MOSFET
- Product Status :
- Active
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max :
- 350W Tc
- Published :
- 2015
- Tradename :
- HiPerFET
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Packaging :
- Tube
- Datasheets
- IXFA76N15T2
IXFA76N15T2 Documents

N-Channel Tube 20m Ω @ 38A, 10V ±20V 5800pF @ 25V 97nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA76N15T2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5800pF @ 25V.This device conducts a continuous drain current (ID) of 76A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 200A.A normal operation of the DS requires keeping the breakdown voltage above 150V.This transistor requires a drain-source voltage (Vdss) of 150V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFA76N15T2 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 76A
based on its rated peak drain current 200A.
a 150V drain to source voltage (Vdss)
IXFA76N15T2 Applications
There are a lot of IXYS
IXFA76N15T2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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