IXFA6N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.90.00.00

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Input Capacitance :

2.83 nF

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Published :

2011

Number of Elements :

1

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Product Category :

MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Tube

Number of Pins :

3

Height :

4.83 mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

6A

Drain-source On Resistance-Max :

0.0024Ohm

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Case Connection :

DRAIN

Terminal Form :

Gull wing

Length :

9.65 mm

Vgs(th) (Max) @ Id :

5V @ 1mA

Packaging :

Tube

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFA6N120

RoHS :

Compliant

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

1200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

FET Type :

N-Channel

FET Feature :

--

ECCN Code :

EAR99

Max Power Dissipation :

250 W

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Power Dissipation-Max (Abs) :

250 W

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Package Shape :

RECTANGULAR

Series :

HiPerFET™, PolarP2™

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

1200V

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

300 mJ

Type :

Polar HiPerFET Power MOSFET

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

2

JEDEC-95 Code :

TO-263AA

Rise Time :

11 ns

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Drain to Source Resistance :

2.4 Ω

Pulsed Drain Current-Max (IDM) :

18A

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 500mA, 10V

Rds On Max :

2.4 Ω

Power Dissipation (Max) :

250W (Tc)

Supplier Device Package :

TO-263 (IXFA)

Width :

10.41 mm

Tradename :

HiPerFET

Power Dissipation-Max :

250W Tc

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Product Type :

MOSFET

Continuous Drain Current (ID) :

6A

Pbfree Code :

yes

Vgs (Max) :

±30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V