IXFA6N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Power Dissipation :

250 W

Mounting Type :

Surface Mount

Rise Time :

11 ns

Packaging :

Tube

Mounting Style :

SMD/SMT

Drain to Source Resistance :

2.4 Ω

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2011

FET Feature :

--

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

6A

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

300 mJ

Vgs(th) (Max) @ Id :

5V @ 1mA

HTS Code :

8541.90.00.00

Channel Mode :

Enhancement

Input Capacitance :

2.83 nF

Power Dissipation (Max) :

250W (Tc)

DS Breakdown Voltage-Min :

1200V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

9.65 mm

Number of Terminals :

2

JEDEC-95 Code :

TO-263AA

ECCN Code :

EAR99

Power Dissipation-Max :

250W Tc

Type :

Polar HiPerFET Power MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V

Base Product Number :

IXFA6N120

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Product Type :

MOSFET

Terminal Position :

Single

Product Status :

Active

Supplier Device Package :

TO-263 (IXFA)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 500mA, 10V

Polarity/Channel Type :

N-Channel

Product Category :

MOSFET

Width :

10.41 mm

Series :

HiPerFET™, PolarP2™

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel

Tradename :

HiPerFET

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

1200V

Drain-source On Resistance-Max :

0.0024Ohm

Maximum Operating Temperature :

+ 150 C

Factory Lead Time :

30 Weeks

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

18A

Surface Mount :

yes

Package :

Tube

Transistor Element Material :

SILICON

Height :

4.83 mm

Rds On Max :

2.4 Ω

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Power Dissipation-Max (Abs) :

250 W

Mount :

Surface Mount

Number of Pins :

3

Brand :

IXYS

Manufacturer :

IXYS

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

6A

Terminal Finish :

Matte Tin (Sn)

RoHS :

Compliant