IXFA5N100P
- Mfr.Part #
- IXFA5N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 4.83 mm
- Rise Time :
- 13 ns
- Mounting Style :
- SMD/SMT
- Number of Elements :
- 1
- Pbfree Code :
- yes
- FET Feature :
- --
- Mounting Type :
- Surface Mount
- Length :
- 9.65 mm
- Power Dissipation (Max) :
- 250W (Tc)
- Base Product Number :
- IXFA5N100
- Rds On (Max) @ Id, Vgs :
- 2.8 Ω @ 2.5A, 10V
- Package :
- Tube
- Vgs (Max) :
- ±30V
- Reach Compliance Code :
- not_compliant
- Minimum Operating Temperature :
- - 55 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 10.41 mm
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Manufacturer :
- IXYS
- Series :
- HiPerFET™, PolarP2™
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 5A
- Product Type :
- MOSFET
- Supplier Device Package :
- TO-263 (IXFA)
- Vgs(th) (Max) @ Id :
- 6V @ 250μA
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 250W Tc
- Terminal Form :
- Gull wing
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max (Abs) :
- 250 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 5A
- Drain to Source Voltage (Vdss) :
- 1000V
- Factory Lead Time :
- 30 Weeks
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 2.8 Ω
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Pulsed Drain Current-Max (IDM) :
- 10A
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 33.4nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 2
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Pin Count :
- 4
- DS Breakdown Voltage-Min :
- 1000V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 1830pF @ 25V
- Product Status :
- Active
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-263AB
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Number of Terminations :
- 2
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- + 150 C
- Type :
- Polar Power MOSFET HiPerFET
- Surface Mount :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Datasheets
- IXFA5N100P

N-Channel Tube 2.8 Ω @ 2.5A, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA5N100P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFA5N100P Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 1000V drain to source voltage (Vdss)
IXFA5N100P Applications
There are a lot of IXYS
IXFA5N100P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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