IXFA5N100P

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Mfr.Part #
IXFA5N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 5A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
4.83 mm
Rise Time :
13 ns
Mounting Style :
SMD/SMT
Number of Elements :
1
Pbfree Code :
yes
FET Feature :
--
Mounting Type :
Surface Mount
Length :
9.65 mm
Power Dissipation (Max) :
250W (Tc)
Base Product Number :
IXFA5N100
Rds On (Max) @ Id, Vgs :
2.8 Ω @ 2.5A, 10V
Package :
Tube
Vgs (Max) :
±30V
Reach Compliance Code :
not_compliant
Minimum Operating Temperature :
- 55 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
10.41 mm
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Manufacturer :
IXYS
Series :
HiPerFET™, PolarP2™
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
5A
Product Type :
MOSFET
Supplier Device Package :
TO-263 (IXFA)
Vgs(th) (Max) @ Id :
6V @ 250μA
Terminal Position :
Single
Qualification Status :
Not Qualified
Power Dissipation-Max :
250W Tc
Terminal Form :
Gull wing
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max (Abs) :
250 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
5A
Drain to Source Voltage (Vdss) :
1000V
Factory Lead Time :
30 Weeks
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
2.8 Ω
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
300 mJ
Pulsed Drain Current-Max (IDM) :
10A
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
33.4nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
2
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Pin Count :
4
DS Breakdown Voltage-Min :
1000V
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2008
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 25V
Product Status :
Active
Brand :
IXYS
JEDEC-95 Code :
TO-263AB
Mount :
Surface Mount
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Number of Terminations :
2
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 150 C
Type :
Polar Power MOSFET HiPerFET
Surface Mount :
yes
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Datasheets
IXFA5N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA5N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Type:Polar Power MOSFET HiPerFET, IXFA5N100P pinout, IXFA5N100P datasheet PDF, IXFA5N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA5N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA5N100P


N-Channel Tube 2.8 Ω @ 2.5A, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA5N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFA5N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 1000V drain to source voltage (Vdss)


IXFA5N100P Applications


There are a lot of IXYS
IXFA5N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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