IXFA5N100P
- Mfr.Part #
- IXFA5N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-263AB
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-263 (IXFA)
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Package :
- Tube
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 250W Tc
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 10.41 mm
- Length :
- 9.65 mm
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 250W (Tc)
- Factory Lead Time :
- 30 Weeks
- Pin Count :
- 4
- Number of Terminations :
- 2
- Transistor Polarity :
- N-Channel
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Number of Terminals :
- 2
- DS Breakdown Voltage-Min :
- 1000V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 1000V
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Rise Time :
- 13 ns
- Base Product Number :
- IXFA5N100
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 33.4nC @ 10V
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 250 W
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 2.8 Ω @ 2.5A, 10V
- RoHS :
- Details
- Published :
- 2008
- Height :
- 4.83 mm
- Series :
- HiPerFET™, PolarP2™
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 5A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Brand :
- IXYS
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 2.8 Ω
- JESD-30 Code :
- R-PSSO-G2
- Tradename :
- HiPerFET
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1830pF @ 25V
- Product Status :
- Active
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Type :
- Polar Power MOSFET HiPerFET
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 6V @ 250μA
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 5A
- Terminal Finish :
- Matte Tin (Sn)
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 10A
- Datasheets
- IXFA5N100P

N-Channel Tube 2.8 Ω @ 2.5A, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA5N100P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFA5N100P Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 1000V drain to source voltage (Vdss)
IXFA5N100P Applications
There are a lot of IXYS
IXFA5N100P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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