IXFA5N100P

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Mfr.Part #
IXFA5N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 5A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarP2™
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-263AB
Vgs(th) (Max) @ Id :
6V @ 250μA
Height :
4.83 mm
Terminal Finish :
Matte Tin (Sn)
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
250W (Tc)
Package :
Tube
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Packaging :
Tube
Pbfree Code :
yes
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 25V
Rds On (Max) @ Id, Vgs :
2.8 Ω @ 2.5A, 10V
Brand :
IXYS
Drain-source On Resistance-Max :
2.8 Ω
Mounting Style :
SMD/SMT
Continuous Drain Current (ID) :
5A
Tradename :
HiPerFET
Manufacturer :
IXYS
Width :
10.41 mm
Number of Elements :
1
Number of Terminations :
2
Product Category :
MOSFET
Product Type :
MOSFET
Rise Time :
13 ns
Base Product Number :
IXFA5N100
Pulsed Drain Current-Max (IDM) :
10A
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Published :
2008
Mount :
Surface Mount
Number of Terminals :
2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Transistor Element Material :
SILICON
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
1000V
DS Breakdown Voltage-Min :
1000V
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
300 mJ
Reach Compliance Code :
not_compliant
Drain Current-Max (Abs) (ID) :
5A
FET Feature :
--
Supplier Device Package :
TO-263 (IXFA)
Pin Count :
4
Qualification Status :
Not Qualified
Vgs (Max) :
±30V
Length :
9.65 mm
Additional Feature :
AVALANCHE RATED
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Form :
Gull wing
RoHS :
Details
Factory Lead Time :
30 Weeks
Power Dissipation-Max (Abs) :
250 W
Gate Charge (Qg) (Max) @ Vgs :
33.4nC @ 10V
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
Type :
Polar Power MOSFET HiPerFET
Power Dissipation-Max :
250W Tc
Datasheets
IXFA5N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA5N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Type:Polar Power MOSFET HiPerFET, IXFA5N100P pinout, IXFA5N100P datasheet PDF, IXFA5N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA5N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA5N100P


N-Channel Tube 2.8 Ω @ 2.5A, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA5N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFA5N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 1000V drain to source voltage (Vdss)


IXFA5N100P Applications


There are a lot of IXYS
IXFA5N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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