IXFA5N100P
- Mfr.Part #
- IXFA5N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarP2™
- Package Shape :
- RECTANGULAR
- JEDEC-95 Code :
- TO-263AB
- Vgs(th) (Max) @ Id :
- 6V @ 250μA
- Height :
- 4.83 mm
- Terminal Finish :
- Matte Tin (Sn)
- Product Status :
- Active
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 250W (Tc)
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tube
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1830pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 2.8 Ω @ 2.5A, 10V
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 2.8 Ω
- Mounting Style :
- SMD/SMT
- Continuous Drain Current (ID) :
- 5A
- Tradename :
- HiPerFET
- Manufacturer :
- IXYS
- Width :
- 10.41 mm
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Rise Time :
- 13 ns
- Base Product Number :
- IXFA5N100
- Pulsed Drain Current-Max (IDM) :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Published :
- 2008
- Mount :
- Surface Mount
- Number of Terminals :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 1000V
- DS Breakdown Voltage-Min :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Reach Compliance Code :
- not_compliant
- Drain Current-Max (Abs) (ID) :
- 5A
- FET Feature :
- --
- Supplier Device Package :
- TO-263 (IXFA)
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- Length :
- 9.65 mm
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Form :
- Gull wing
- RoHS :
- Details
- Factory Lead Time :
- 30 Weeks
- Power Dissipation-Max (Abs) :
- 250 W
- Gate Charge (Qg) (Max) @ Vgs :
- 33.4nC @ 10V
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- Type :
- Polar Power MOSFET HiPerFET
- Power Dissipation-Max :
- 250W Tc
- Datasheets
- IXFA5N100P

N-Channel Tube 2.8 Ω @ 2.5A, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA5N100P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFA5N100P Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 1000V drain to source voltage (Vdss)
IXFA5N100P Applications
There are a lot of IXYS
IXFA5N100P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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