IXFA4N60P3
- Mfr.Part #
- IXFA4N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A TO263
- Stock
- 3,184
- In Stock :
- 3,184
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-263 (IXFA)
- Avalanche Energy Rating (Eas) :
- 200 mJ
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Tradename :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 365pF @ 25V
- Power Dissipation (Max) :
- 114W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 8A
- JEDEC-95 Code :
- TO-263AB
- Drain-source On Resistance-Max :
- 2.2 Ω
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Series :
- HiPerFET™, Polar3™
- Factory Lead Time :
- 24 Weeks
- Drain Current-Max (Abs) (ID) :
- 4A
- Number of Terminals :
- 2
- DS Breakdown Voltage-Min :
- 600V
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 6.9nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFA4N60
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Surface Mount
- Mounting Style :
- SMD/SMT
- Terminal Finish :
- Matte Tin (Sn)
- Manufacturer :
- IXYS
- RoHS :
- Details
- Power Dissipation-Max (Abs) :
- 114 W
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Surface Mount :
- yes
- Power Dissipation-Max :
- 114W Tc
- Number of Elements :
- 1
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2011
- Package :
- Tube
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 4A
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 2.2 Ω @ 2A, 10V
- Pin Count :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Datasheets
- IXFA4N60P3
IXFA4N60P3 Documents

N-Channel Tube 2.2 Ω @ 2A, 10V ±30V 365pF @ 25V 6.9nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA4N60P3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 365pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4A, which represents the maximum continuous current it can conduct.In this device, the drain current is 4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFA4N60P3 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
a 600V drain to source voltage (Vdss)
IXFA4N60P3 Applications
There are a lot of IXYS
IXFA4N60P3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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