IXFA4N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-263 (IXFA)

Mounting Style :

SMD/SMT

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

700 mJ

Drain to Source Resistance :

3 Ω

Drain to Source Voltage (Vdss) :

1000V

Vgs (Max) :

±20V

Turn-Off Delay Time :

32 ns

Width :

9.65 mm

Power Dissipation (Max) :

150W (Tc)

Tradename :

HyperFET

Number of Terminations :

2

Base Product Number :

IXFA4N100

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

4A

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Number of Elements :

1

Pin Count :

4

Factory Lead Time :

30 Weeks

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4.5V @ 1.5mA

Max Operating Temperature :

150 °C

Configuration :

Single

Rds On Max :

3 Ω

Lead Free :

Lead Free

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-263AB

Transistor Application :

SWITCHING

Brand :

IXYS

Input Capacitance :

1.05 nF

Reach Compliance Code :

not_compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

16 A

Manufacturer :

IXYS

Transistor Element Material :

SILICON

FET Feature :

--

Number of Channels :

1 Channel

JESD-30 Code :

R-PSSO-G2

Max Power Dissipation :

150 W

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

1kV

Radiation Hardening :

No

Rise Time :

15ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

18 ns

Drain Current-Max (Abs) (ID) :

4A

RoHS Status :

ROHS3 Compliant

Number of Terminals :

2

Drain-source On Resistance-Max :

3 Ω

Surface Mount :

yes

Product Status :

Active

Product Type :

MOSFET

Terminal Position :

Single

RoHS :

Compliant

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

150 W

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Length :

10.41 mm

Power Dissipation :

150W

Package Shape :

RECTANGULAR

Resistance :

3Ohm

Height :

4.83 mm

Mount :

Surface Mount

Published :

2011

Series :

HiPerFET™

Power Dissipation-Max :

150W Tc

Package :

Tube

Transistor Type :

1 N-Channel

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

1000 V

Min Operating Temperature :

-55 °C

Packaging :

Tube

Transistor Polarity :

N-Channel