IXFA4N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Power Dissipation :

150W

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Pulsed Drain Current-Max (IDM) :

16 A

Tradename :

HyperFET

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

1000V

Radiation Hardening :

No

Max Operating Temperature :

150 °C

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Supplier Device Package :

TO-263 (IXFA)

Vgs(th) (Max) @ Id :

4.5V @ 1.5mA

Configuration :

Single

Lead Free :

Lead Free

Number of Channels :

1 Channel

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

700 mJ

Power Dissipation-Max (Abs) :

150 W

RoHS :

Compliant

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Power Dissipation-Max :

150W Tc

FET Feature :

--

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

1kV

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

3Ohm

JESD-609 Code :

e3

Manufacturer :

IXYS

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4A

Product Status :

Active

Height :

4.83 mm

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Terminal Position :

Single

Mounting Style :

SMD/SMT

Drain to Source Resistance :

3 Ω

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Qualification Status :

Not Qualified

Product Type :

MOSFET

Reach Compliance Code :

not_compliant

Input Capacitance :

1.05 nF

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

150W (Tc)

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

3 Ω

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

1000 V

Number of Elements :

1

Base Product Number :

IXFA4N100

Transistor Application :

SWITCHING

Turn-Off Delay Time :

32 ns

Length :

10.41 mm

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Max Power Dissipation :

150 W

Package :

Tube

Vgs (Max) :

±20V

Fall Time (Typ) :

18 ns

Published :

2011

Transistor Element Material :

SILICON

Factory Lead Time :

30 Weeks

JEDEC-95 Code :

TO-263AB

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4A

Pbfree Code :

yes

Width :

9.65 mm

Mount :

Surface Mount

Brand :

IXYS

Min Operating Temperature :

-55 °C

Number of Terminals :

2

Rds On Max :

3 Ω