IXFA4N100P
- Mfr.Part #
- IXFA4N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 4A TO263
- Stock
- 23,927
- In Stock :
- 23,927
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 8A
- Tradename :
- HiPerFET
- Drain Current-Max (Abs) (ID) :
- 4A
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Factory Lead Time :
- 30 Weeks
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 4A
- Rise Time :
- 36 ns
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 3.3 Ω
- JESD-609 Code :
- e3
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Power Dissipation :
- 150 W
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 150W (Tc)
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Terminal Form :
- Gull wing
- FET Feature :
- --
- Number of Terminals :
- 2
- Rds On Max :
- 3.3 Ω
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HiPerFET™, PolarP2™
- DS Breakdown Voltage-Min :
- 1000V
- Mount :
- Surface Mount
- Package :
- Tube
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-263AB
- Base Product Number :
- IXFA4N100
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS
- Drain to Source Resistance :
- 3.3 Ω
- Width :
- 10.41 mm
- Input Capacitance :
- 1.456 nF
- Mounting Style :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Power Dissipation-Max (Abs) :
- 150 W
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1456pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 3.3 Ω @ 2A, 10V
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 150W Tc
- Number of Elements :
- 1
- RoHS :
- Compliant
- FET Type :
- N-Channel
- Type :
- Polar HiPerFET Power MOSFET
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 9.65 mm
- Transistor Type :
- 1 N-Channel
- Height :
- 4.83 mm
- Terminal Finish :
- Matte Tin (Sn)
- Supplier Device Package :
- TO-263 (IXFA)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFA4N100P

N-Channel Tube 3.3 Ω @ 2A, 10V ±20V 1456pF @ 25V 26nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA4N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1456pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 4A.There is a peak drain current of 8A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3.3 Ω.In order for DS breakdown voltage to remain above 1000V, it should remain above the 1000V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFA4N100P Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
single MOSFETs transistor is 3.3 Ω
a 1000V drain to source voltage (Vdss)
IXFA4N100P Applications
There are a lot of IXYS
IXFA4N100P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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