IXFA4N100P
- Mfr.Part #
- IXFA4N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 4A TO263
- Stock
- 23,927
- In Stock :
- 23,927
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 150W (Tc)
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 3.3 Ω
- Transistor Polarity :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Height :
- 4.83 mm
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 8A
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Brand :
- IXYS
- Manufacturer :
- IXYS
- RoHS :
- Compliant
- Mounting Style :
- SMD/SMT
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 150W Tc
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Tradename :
- HiPerFET
- Number of Terminals :
- 2
- Max Power Dissipation :
- 150 W
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Rise Time :
- 36 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 3.3 Ω @ 2A, 10V
- Input Capacitance :
- 1.456 nF
- Supplier Device Package :
- TO-263 (IXFA)
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Type :
- Polar HiPerFET Power MOSFET
- Width :
- 10.41 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Series :
- HiPerFET™, PolarP2™
- Length :
- 9.65 mm
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 4
- Terminal Position :
- Single
- Product Status :
- Active
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 3.3 Ω
- FET Type :
- N-Channel
- Published :
- 2010
- Product Type :
- MOSFET
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 4A
- Mount :
- Surface Mount
- Rds On Max :
- 3.3 Ω
- Base Product Number :
- IXFA4N100
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 4A
- JEDEC-95 Code :
- TO-263AB
- Power Dissipation-Max (Abs) :
- 150 W
- Product Category :
- MOSFET
- Factory Lead Time :
- 30 Weeks
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1456pF @ 25V
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 1000V
- Channel Mode :
- Enhancement
- Package :
- Tube
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 1000V
- Datasheets
- IXFA4N100P

N-Channel Tube 3.3 Ω @ 2A, 10V ±20V 1456pF @ 25V 26nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA4N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1456pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 4A.There is a peak drain current of 8A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3.3 Ω.In order for DS breakdown voltage to remain above 1000V, it should remain above the 1000V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFA4N100P Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
single MOSFETs transistor is 3.3 Ω
a 1000V drain to source voltage (Vdss)
IXFA4N100P Applications
There are a lot of IXYS
IXFA4N100P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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