IXFA4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

150 W

Mount :

Surface Mount

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

1000V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 2A, 10V

Supplier Device Package :

TO-263 (IXFA)

Packaging :

Tube

Drain to Source Voltage (Vdss) :

1000V

Terminal Position :

Single

Rise Time :

36 ns

Base Product Number :

IXFA4N100

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™, PolarP2™

Input Capacitance :

1.456 nF

Pulsed Drain Current-Max (IDM) :

8A

Height :

4.83 mm

Max Power Dissipation :

150 W

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Drain Current-Max (Abs) (ID) :

4A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HiPerFET

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1456pF @ 25V

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Pin Count :

4

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Number of Terminals :

2

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

SMD/SMT

JEDEC-95 Code :

TO-263AB

Width :

10.41 mm

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Power Dissipation-Max :

150W Tc

Length :

9.65 mm

Avalanche Energy Rating (Eas) :

200 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Type :

1 N-Channel

Type :

Polar HiPerFET Power MOSFET

Manufacturer :

IXYS

Power Dissipation (Max) :

150W (Tc)

Case Connection :

DRAIN

RoHS :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Drain to Source Resistance :

3.3 Ω

FET Feature :

--

Product Type :

MOSFET

Published :

2010

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Drain-source On Resistance-Max :

3.3 Ω

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4A

Number of Channels :

1 Channel

Rds On Max :

3.3 Ω

Product Category :

MOSFET

Number of Elements :

1

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing