IXFA4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

4A

FET Feature :

--

Number of Terminals :

2

Factory Lead Time :

30 Weeks

Channel Mode :

Enhancement

Max Power Dissipation :

150 W

Transistor Polarity :

N-Channel

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

JEDEC-95 Code :

TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 2A, 10V

Series :

HiPerFET™, PolarP2™

Drain to Source Resistance :

3.3 Ω

Continuous Drain Current (ID) :

4A

Package :

Tube

Mount :

Surface Mount

Tradename :

HiPerFET

Power Dissipation (Max) :

150W (Tc)

Pin Count :

4

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

200 mJ

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Power Dissipation-Max (Abs) :

150 W

Rise Time :

36 ns

RoHS :

Compliant

Type :

Polar HiPerFET Power MOSFET

Drain to Source Voltage (Vdss) :

1000V

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

1000V

Pulsed Drain Current-Max (IDM) :

8A

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain-source On Resistance-Max :

3.3 Ω

JESD-609 Code :

e3

Terminal Position :

Single

Base Product Number :

IXFA4N100

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1456pF @ 25V

Surface Mount :

yes

Input Capacitance :

1.456 nF

Number of Elements :

1

Brand :

IXYS

Supplier Device Package :

TO-263 (IXFA)

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Terminal Form :

Gull wing

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Height :

4.83 mm

Mounting Style :

SMD/SMT

Product Category :

MOSFET

Power Dissipation-Max :

150W Tc

Terminal Finish :

Matte Tin (Sn)

Width :

10.41 mm

Length :

9.65 mm

Qualification Status :

Not Qualified

Product Type :

MOSFET

Packaging :

Tube

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

Product Status :

Active

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Transistor Type :

1 N-Channel

Rds On Max :

3.3 Ω