IXFA4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

8A

Tradename :

HiPerFET

Drain Current-Max (Abs) (ID) :

4A

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

Factory Lead Time :

30 Weeks

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

4A

Rise Time :

36 ns

Minimum Operating Temperature :

- 55 C

Brand :

IXYS

Channel Mode :

Enhancement

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

3.3 Ω

JESD-609 Code :

e3

Product Type :

MOSFET

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Power Dissipation :

150 W

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Channels :

1 Channel

Power Dissipation (Max) :

150W (Tc)

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Terminal Form :

Gull wing

FET Feature :

--

Number of Terminals :

2

Rds On Max :

3.3 Ω

Product Status :

Active

Avalanche Energy Rating (Eas) :

200 mJ

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™, PolarP2™

DS Breakdown Voltage-Min :

1000V

Mount :

Surface Mount

Package :

Tube

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-263AB

Base Product Number :

IXFA4N100

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Drain to Source Resistance :

3.3 Ω

Width :

10.41 mm

Input Capacitance :

1.456 nF

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Published :

2010

Power Dissipation-Max (Abs) :

150 W

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1456pF @ 25V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 2A, 10V

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

150W Tc

Number of Elements :

1

RoHS :

Compliant

FET Type :

N-Channel

Type :

Polar HiPerFET Power MOSFET

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Length :

9.65 mm

Transistor Type :

1 N-Channel

Height :

4.83 mm

Terminal Finish :

Matte Tin (Sn)

Supplier Device Package :

TO-263 (IXFA)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V