IXFA3N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

800 V

Packaging :

Tube

Transistor Polarity :

N-Channel

Number of Terminations :

2

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

100W Tc

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Channel Mode :

Enhancement

Supplier Device Package :

TO-263 (IXFA)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Mounting Type :

Surface Mount

Surface Mount :

yes

Product Type :

MOSFET

Mounting Style :

SMD/SMT

Power Dissipation :

100W

Pin Count :

4

Brand :

IXYS

Number of Terminals :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

11ns

Product Category :

MOSFET

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Length :

9.9 mm

Drain to Source Breakdown Voltage :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Subcategory :

MOSFETs

Continuous Drain Current (ID) :

3.6A

Pbfree Code :

yes

Configuration :

Single

Power Dissipation (Max) :

100W (Tc)

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

14.4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

14 ns

Drain-source On Resistance-Max :

3.6 Ω

Transistor Element Material :

SILICON

Turn-Off Delay Time :

25 ns

Height :

4.5 mm

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

800V

Maximum Operating Temperature :

+ 150 C

Tradename :

HyperFET

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Published :

2000

JESD-30 Code :

R-PSSO-G2

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

FET Feature :

--

Package :

Tube

Series :

HiPerFET™

JEDEC-95 Code :

TO-263

Width :

9.2 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Transistor Type :

1 N-Channel

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

685pF @ 25V

Base Product Number :

IXFA3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Minimum Operating Temperature :

- 55 C