IXFA3N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Mounting Type :

Surface Mount

Rise Time :

15ns

Number of Elements :

1

Package Shape :

RECTANGULAR

Continuous Drain Current Id :

3A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

5V @ 1.5mA

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Transistor Type :

1 N-Channel

Power Dissipation-Max :

200W Tc

Transistor Polarity :

N-Channel

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Subcategory :

MOSFETs

Width :

9.2 mm

Turn-Off Delay Time :

32 ns

Length :

9.9 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

3A

Case Connection :

DRAIN

Channel Type :

N Channel

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

2

Power Dissipation :

200W

RoHS :

Details

Product Type :

MOSFET

Supplier Device Package :

TO-263 (IXFA)

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Pbfree Code :

yes

Element Configuration :

Single

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Surface Mount :

yes

Product Category :

MOSFET

Base Product Number :

IXFA3

FET Type :

N-Channel

Terminal Form :

Gull wing

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

30 Weeks

Radiation Hardening :

No

Power Dissipation (Max) :

200W (Tc)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Configuration :

Single

Height :

4.5 mm

Vgs (Max) :

±20V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

1200V

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 1.5A, 10V

Drain to Source Breakdown Voltage :

1.2kV

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

18 ns

Pulsed Drain Current-Max (IDM) :

12 A

Mounting Style :

SMD/SMT

Continuous Drain Current (ID) :

3A

Series :

HiPerFET™

Drain-source On Resistance-Max :

4.5 Ω

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

JEDEC-95 Code :

TO-263AB

Terminal Position :

Single

Qualification :

-

Tradename :

HiPerFET

DS Breakdown Voltage-Min :

1200 V

Avalanche Energy Rating (Eas) :

700 mJ

Transistor Application :

SWITCHING

Brand :

IXYS

Published :

2004

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Matte Tin (Sn)