IXFA3N120

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Mfr.Part #
IXFA3N120
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1200V 3A TO263
Stock
1,356
In Stock :
1,356

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
12 A
Continuous Drain Current (ID) :
3A
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Published :
2004
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Channel Type :
N Channel
Terminal Finish :
Matte Tin (Sn)
Width :
9.2 mm
JEDEC-95 Code :
TO-263AB
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification :
-
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
1200 V
Number of Terminations :
2
Number of Terminals :
2
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Enhancement
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Radiation Hardening :
No
Brand :
IXYS
JESD-609 Code :
e3
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
200W Tc
Element Configuration :
Single
Power Dissipation :
200W
Length :
9.9 mm
Power Dissipation (Max) :
200W (Tc)
Avalanche Energy Rating (Eas) :
700 mJ
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
1.2kV
Subcategory :
MOSFETs
Base Product Number :
IXFA3
Rise Time :
15ns
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Package Shape :
RECTANGULAR
Tradename :
HiPerFET
Pin Count :
4
Drain to Source Voltage (Vdss) :
1200V
Transistor Type :
1 N-Channel
Lead Free :
Lead Free
Turn-Off Delay Time :
32 ns
RoHS :
Details
Rds On (Max) @ Id, Vgs :
4.5 Ω @ 1.5A, 10V
Product Status :
Active
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 1.5mA
Maximum Operating Temperature :
+ 150 C
Surface Mount :
yes
Series :
HiPerFET™
Case Connection :
DRAIN
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Factory Lead Time :
30 Weeks
Continuous Drain Current Id :
3A
Number of Elements :
1
Drain-source On Resistance-Max :
4.5 Ω
Fall Time (Typ) :
18 ns
Terminal Form :
Gull wing
Drain Current-Max (Abs) (ID) :
3A
Mount :
Surface Mount
Supplier Device Package :
TO-263 (IXFA)
Height :
4.5 mm
FET Feature :
--
Number of Channels :
1 Channel
Product Type :
MOSFET
Mounting Style :
SMD/SMT
Reach Compliance Code :
not_compliant
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Package :
Tube
Manufacturer :
IXYS
Datasheets
IXFA3N120
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA3N120 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXFA3N120 pinout, IXFA3N120 datasheet PDF, IXFA3N120 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA3N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA3N120


N-Channel Tube 4.5 Ω @ 1.5A, 10V ±20V 1050pF @ 25V 39nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA3N120 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 1050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Its maximum pulsed drain current is 12 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFA3N120 Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 12 A.
a 1200V drain to source voltage (Vdss)


IXFA3N120 Applications


There are a lot of IXYS
IXFA3N120 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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