IXFA3N120
- Mfr.Part #
- IXFA3N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 3A TO263
- Stock
- 1,356
- In Stock :
- 1,356
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 12 A
- Continuous Drain Current (ID) :
- 3A
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2004
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Type :
- N Channel
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 9.2 mm
- JEDEC-95 Code :
- TO-263AB
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification :
- -
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 1200 V
- Number of Terminations :
- 2
- Number of Terminals :
- 2
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Channel Mode :
- Enhancement
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Radiation Hardening :
- No
- Brand :
- IXYS
- JESD-609 Code :
- e3
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 200W Tc
- Element Configuration :
- Single
- Power Dissipation :
- 200W
- Length :
- 9.9 mm
- Power Dissipation (Max) :
- 200W (Tc)
- Avalanche Energy Rating (Eas) :
- 700 mJ
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 1.2kV
- Subcategory :
- MOSFETs
- Base Product Number :
- IXFA3
- Rise Time :
- 15ns
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Package Shape :
- RECTANGULAR
- Tradename :
- HiPerFET
- Pin Count :
- 4
- Drain to Source Voltage (Vdss) :
- 1200V
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 32 ns
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 4.5 Ω @ 1.5A, 10V
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- yes
- Series :
- HiPerFET™
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 25V
- Factory Lead Time :
- 30 Weeks
- Continuous Drain Current Id :
- 3A
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 4.5 Ω
- Fall Time (Typ) :
- 18 ns
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 3A
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-263 (IXFA)
- Height :
- 4.5 mm
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Mounting Style :
- SMD/SMT
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Package :
- Tube
- Manufacturer :
- IXYS
- Datasheets
- IXFA3N120

N-Channel Tube 4.5 Ω @ 1.5A, 10V ±20V 1050pF @ 25V 39nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA3N120 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 1050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Its maximum pulsed drain current is 12 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA3N120 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 12 A.
a 1200V drain to source voltage (Vdss)
IXFA3N120 Applications
There are a lot of IXYS
IXFA3N120 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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