IXFA36N20X3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFA36

Reach Compliance Code :

Unknown

Manufacturer :

IXYS

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

176W (Tc)

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 500μA

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Product Status :

Active

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1425pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Product Category :

MOSFET

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Package :

Tube

Channel Mode :

Enhancement

Rise Time :

30 ns

Mounting Style :

SMD/SMT

Transistor Application :

SWITCHING

RoHS :

Details

Surface Mount :

yes

Number of Elements :

1

Tradename :

HiPerFET

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Number of Terminations :

2

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

50A

DS Breakdown Voltage-Min :

200V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package :

TO-263AA

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Surface Mount

Factory Lead Time :

19 Weeks

Drain Current-Max (Abs) (ID) :

36A

Subcategory :

MOSFETs

FET Feature :

--

Case Connection :

DRAIN

Power Dissipation-Max :

176W Tc

Series :

HiPerFET™

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

300 mJ

Drain-source On Resistance-Max :

0.045Ohm

Rds On (Max) @ Id, Vgs :

45m Ω @ 18A, 10V

Maximum Operating Temperature :

+ 150 C