IXFA22N60P3
- Mfr.Part #
- IXFA22N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO263AA
- Stock
- 47,096
- In Stock :
- 47,096
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 30 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 600V
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 11A, 10V
- Pin Count :
- 4
- FET Type :
- N-Channel
- Surface Mount :
- yes
- RoHS Status :
- RoHS Compliant
- Drain Current-Max (Abs) (ID) :
- 22A
- Supplier Device Package :
- TO-263AA
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Mounting Type :
- Surface Mount
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 500W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Base Product Number :
- IXFA22
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 500W Tc
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 55A
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 2
- Reach Compliance Code :
- not_compliant
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.36ohm
- Tradename :
- HiPerFET
- Terminal Finish :
- Matte Tin (Sn)
- Package :
- Tube
- Series :
- HiPerFET™, Polar3™
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Datasheets
- IXFA22N60P3

N-Channel Tube 390m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA22N60P3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2600pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 22A.There is a peak drain current of 55A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFA22N60P3 Features
the avalanche energy rating (Eas) is 400 mJ
based on its rated peak drain current 55A.
a 600V drain to source voltage (Vdss)
IXFA22N60P3 Applications
There are a lot of IXYS
IXFA22N60P3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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