IXFA22N60P3
- Mfr.Part #
- IXFA22N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO263AA
- Stock
- 47,096
- In Stock :
- 47,096
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 500W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Package :
- Tube
- Mounting Type :
- Surface Mount
- Tradename :
- HiPerFET
- RoHS Status :
- RoHS Compliant
- Product Status :
- Active
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 11A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Drain-source On Resistance-Max :
- 0.36ohm
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Series :
- HiPerFET™, Polar3™
- Pin Count :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±30V
- Supplier Device Package :
- TO-263AA
- Number of Elements :
- 1
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 55A
- Product Type :
- MOSFET
- FET Feature :
- --
- Power Dissipation-Max :
- 500W Tc
- Base Product Number :
- IXFA22
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Drain to Source Voltage (Vdss) :
- 600V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Drain Current-Max (Abs) (ID) :
- 22A
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Factory Lead Time :
- 30 Weeks
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 600V
- Datasheets
- IXFA22N60P3

N-Channel Tube 390m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA22N60P3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2600pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 22A.There is a peak drain current of 55A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFA22N60P3 Features
the avalanche energy rating (Eas) is 400 mJ
based on its rated peak drain current 55A.
a 600V drain to source voltage (Vdss)
IXFA22N60P3 Applications
There are a lot of IXYS
IXFA22N60P3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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