IXFA180N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max (Abs) :

480 W

FET Feature :

--

Package :

Tube

Power Dissipation-Max :

480W Tc

Lead Free :

Lead Free

Product Category :

MOSFET

Mount :

Surface Mount

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Pbfree Code :

yes

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

180A

Factory Lead Time :

30 Weeks

Product Status :

Active

Input Capacitance :

10.5 nF

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Power Dissipation (Max) :

480W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

ECCN Code :

EAR99

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

480 W

Channel Mode :

Enhancement

Published :

2010

Tradename :

HiPerFET

Case Connection :

DRAIN

Number of Channels :

1 Channel

Pin Count :

3

JESD-609 Code :

e3

Base Product Number :

IXFA180

Reach Compliance Code :

not_compliant

Number of Terminals :

2

RoHS :

Details

Drain-source On Resistance-Max :

0.006Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

180 A

Mounting Style :

SMD/SMT

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

yes

Maximum Operating Temperature :

+ 175 C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Minimum Operating Temperature :

- 55 C

Brand :

IXYS

Manufacturer :

IXYS

FET Type :

N-Channel

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

750 mJ

Rds On Max :

6 mΩ

Terminal Form :

Gull wing

Number of Terminations :

2

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

450A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

MOSFET

Supplier Device Package :

TO-263 (IXFA)