IXFA180N10T2
- Mfr.Part #
- IXFA180N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO263
- Stock
- 2,874
- In Stock :
- 2,874
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Tradename :
- HiPerFET
- Brand :
- IXYS
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 100V
- FET Feature :
- --
- Case Connection :
- DRAIN
- Base Product Number :
- IXFA180
- Rds On Max :
- 6 mΩ
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 180 A
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 50A, 10V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max (Abs) :
- 480 W
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.006Ohm
- Number of Terminals :
- 2
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 480W Tc
- ECCN Code :
- EAR99
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Mounting Style :
- SMD/SMT
- Pulsed Drain Current-Max (IDM) :
- 450A
- Maximum Operating Temperature :
- + 175 C
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Transistor Polarity :
- N-Channel
- JESD-609 Code :
- e3
- Product Status :
- Active
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 180A
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Power Dissipation (Max) :
- 480W (Tc)
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 10.5 nF
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-263 (IXFA)
- Drain to Source Voltage (Vdss) :
- 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 480 W
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 25V
- Factory Lead Time :
- 30 Weeks
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Datasheets
- IXFA180N10T2

N-Channel Tube 6m Ω @ 50A, 10V ±20V 10500pF @ 25V 185nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA180N10T2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10500pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 180 A.Pulsed drain current is maximum rated peak drain current 450A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFA180N10T2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)
IXFA180N10T2 Applications
There are a lot of IXYS
IXFA180N10T2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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