IXFA180N10T2
- Mfr.Part #
- IXFA180N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO263
- Stock
- 2,874
- In Stock :
- 2,874
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.006Ohm
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 180 A
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Product Category :
- MOSFET
- Brand :
- IXYS
- Base Product Number :
- IXFA180
- RoHS :
- Details
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 180A
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 450A
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 50A, 10V
- Number of Terminations :
- 2
- Factory Lead Time :
- 30 Weeks
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 480W Tc
- Mount :
- Surface Mount
- Power Dissipation (Max) :
- 480W (Tc)
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- FET Feature :
- --
- Published :
- 2010
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 2
- Input Capacitance :
- 10.5 nF
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 100V
- Power Dissipation-Max (Abs) :
- 480 W
- Mounting Style :
- SMD/SMT
- Tradename :
- HiPerFET
- Max Power Dissipation :
- 480 W
- Rds On Max :
- 6 mΩ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-263 (IXFA)
- Maximum Operating Temperature :
- + 175 C
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Product Type :
- MOSFET
- Reach Compliance Code :
- not_compliant
- Datasheets
- IXFA180N10T2

N-Channel Tube 6m Ω @ 50A, 10V ±20V 10500pF @ 25V 185nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA180N10T2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10500pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 180 A.Pulsed drain current is maximum rated peak drain current 450A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFA180N10T2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)
IXFA180N10T2 Applications
There are a lot of IXYS
IXFA180N10T2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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