IXFA180N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Terminal Form :

Gull wing

Lead Free :

Lead Free

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

750 mJ

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Number of Elements :

1

RoHS :

Details

Number of Terminations :

2

FET Type :

N-Channel

Pin Count :

3

Drain-source On Resistance-Max :

0.006Ohm

Power Dissipation-Max (Abs) :

480 W

Number of Channels :

1 Channel

Product Type :

MOSFET

Case Connection :

DRAIN

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

180 A

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Mounting Style :

SMD/SMT

Base Product Number :

IXFA180

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

6 mΩ

Number of Terminals :

2

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Power Dissipation :

480 W

Power Dissipation-Max :

480W Tc

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

Qualification Status :

Not Qualified

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Vgs (Max) :

±20V

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Brand :

IXYS

Maximum Operating Temperature :

+ 175 C

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

30 Weeks

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

450A

ECCN Code :

EAR99

FET Feature :

--

Transistor Application :

SWITCHING

Supplier Device Package :

TO-263 (IXFA)

Product Status :

Active

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

100V

Input Capacitance :

10.5 nF

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Transistor Polarity :

N-Channel

Published :

2010

Additional Feature :

AVALANCHE RATED

Tradename :

HiPerFET

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Continuous Drain Current (ID) :

180A

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Manufacturer :

IXYS

Power Dissipation (Max) :

480W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED