IXFA16N50P3
- Mfr.Part #
- IXFA16N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO263
- Stock
- 7,731
- In Stock :
- 7,731
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150 °C
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 16A
- Pulsed Drain Current-Max (IDM) :
- 40A
- Base Product Number :
- IXFA16
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.36ohm
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1515pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Rds On Max :
- 360 mΩ
- Tradename :
- HiPerFET
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Reach Compliance Code :
- not_compliant
- DS Breakdown Voltage-Min :
- 500V
- Package :
- Tube
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 500V
- JESD-609 Code :
- e3
- RoHS :
- Details
- Input Capacitance :
- 1.515 nF
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 8A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Product Category :
- MOSFET
- Min Operating Temperature :
- -55 °C
- Factory Lead Time :
- 30 Weeks
- Series :
- HiPerFET™, Polar3™
- Mounting Style :
- SMD/SMT
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 330W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Product Status :
- Active
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-263 (IXFA)
- Power Dissipation (Max) :
- 330W (Tc)
- Product Type :
- MOSFET
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 330 W
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- Published :
- 2013
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Datasheets
- IXFA16N50P3

N-Channel Tube 360m Ω @ 8A, 10V ±30V 1515pF @ 25V 29nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA16N50P3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The maximum input capacitance of this device is 1515pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFA16N50P3 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 40A.
a 500V drain to source voltage (Vdss)
IXFA16N50P3 Applications
There are a lot of IXYS
IXFA16N50P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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