IXFA16N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Length :

10.41 mm

Voltage - Rated DC :

500V

Current Rating :

16A

Supplier Device Package :

TO-263 (IXFA)

Power Dissipation-Max :

300W Tc

Mounting Style :

SMD/SMT

Terminal Position :

Single

Configuration :

Single

Avalanche Energy Rating (Eas) :

750 mJ

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Terminal Finish :

Matte Tin (Sn)

FET Feature :

--

Tradename :

HiPerFET

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

16 A

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

300 W

Drain-source On Resistance-Max :

0.4 Ω

Rise Time :

25ns

Vgs (Max) :

±30V

Mount :

Surface Mount

Height :

4.83 mm

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

40A

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

5.5V

RoHS :

Details

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Base Product Number :

IXFA16

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500 V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Case Connection :

DRAIN

Pbfree Code :

yes

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Number of Terminals :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2006

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

500V

Number of Pins :

3

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Element Configuration :

Single

Fall Time (Typ) :

22 ns

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

16A

Rds On (Max) @ Id, Vgs :

400m Ω @ 8A, 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

JEDEC-95 Code :

TO-220AB

Width :

9.65 mm

Power Dissipation (Max) :

300W (Tc)

Series :

HiPerFET™, PolarHT™

Pin Count :

4

Turn-Off Delay Time :

70 ns

Mounting Type :

Surface Mount

Product Category :

MOSFET

Resistance :

400mOhm

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

Power Dissipation :

300W

Reach Compliance Code :

Unknown

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99