IXFA14N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Package Shape :

RECTANGULAR

Number of Terminals :

2

Drain Current-Max (Abs) (ID) :

14 A

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

10 Weeks

Pulsed Drain Current-Max (IDM) :

35A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Published :

2011

Mounting Type :

Surface Mount

Supplier Device Package :

TO-263 (IXFA)

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

2

Continuous Drain Current (ID) :

14A

Input Capacitance (Ciss) (Max) @ Vds :

1480pF @ 25V

Rds On (Max) @ Id, Vgs :

540m Ω @ 7A, 10V

Power Dissipation-Max :

327W Tc

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Product Status :

Obsolete

Base Product Number :

IXFA14

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

JEDEC-95 Code :

TO-263AB

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Power Dissipation-Max (Abs) :

327 W

Series :

HiPerFET™, Polar3™

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Power Dissipation (Max) :

327W (Tc)

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Packaging :

Tube

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.54Ohm

DS Breakdown Voltage-Min :

600V

Avalanche Energy Rating (Eas) :

700 mJ

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Number of Elements :

1

Manufacturer :

IXYS Corporation