IXFA14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Power Dissipation (Max) :

300W (Tc)

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFA14

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

300 W

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Minimum Operating Temperature :

- 55 C

Width :

9.2 mm

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pin Count :

4

Element Configuration :

Single

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

14A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

600 V

Fall Time (Typ) :

26 ns

Number of Terminations :

2

Number of Terminals :

2

Packaging :

Tube

Product Type :

MOSFET

Turn-Off Delay Time :

70 ns

Published :

2008

Qualification Status :

Not Qualified

Number of Elements :

1

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes

Terminal Form :

Gull wing

Height :

4.5 mm

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Vgs (Max) :

±30V

Configuration :

Single

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Resistance :

550mOhm

Series :

HiPerFET™, PolarHT™

Length :

9.9 mm

Voltage - Rated DC :

600V

Factory Lead Time :

21 Weeks

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

42A

RoHS :

Details

Tradename :

HiPerFET

Power Dissipation :

300W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

300W Tc

Drain-source On Resistance-Max :

0.55 Ω

Current Rating :

14A

Supplier Device Package :

TO-263 (IXFA)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Channel Mode :

Enhancement

Rise Time :

27ns

Avalanche Energy Rating (Eas) :

900 mJ

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

14 A