IXFA14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

42A

Voltage - Rated DC :

600V

Qualification Status :

Not Qualified

Power Dissipation-Max :

300W Tc

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Base Product Number :

IXFA14

Product Type :

MOSFET

Product Category :

MOSFET

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Supplier Device Package :

TO-263 (IXFA)

Resistance :

550mOhm

RoHS :

Details

Power Dissipation (Max) :

300W (Tc)

Drain Current-Max (Abs) (ID) :

14 A

Lead Free :

Lead Free

Vgs (Max) :

±30V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Avalanche Energy Rating (Eas) :

900 mJ

Drain-source On Resistance-Max :

0.55 Ω

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

FET Feature :

--

Turn-Off Delay Time :

70 ns

Channel Mode :

Enhancement

Rise Time :

27ns

Maximum Operating Temperature :

+ 150 C

Factory Lead Time :

21 Weeks

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Mount :

Surface Mount

Element Configuration :

Single

Manufacturer :

IXYS

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Gate to Source Voltage (Vgs) :

30V

Current Rating :

14A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

600V

Number of Terminals :

2

Tradename :

HiPerFET

Published :

2008

Width :

9.2 mm

Length :

9.9 mm

Number of Elements :

1

Continuous Drain Current (ID) :

14A

Series :

HiPerFET™, PolarHT™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

300 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Height :

4.5 mm

Package :

Tube

Polarity/Channel Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Product Status :

Active

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600 V

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Pbfree Code :

yes

Power Dissipation :

300W

Case Connection :

DRAIN

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AB

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Fall Time (Typ) :

26 ns