IXFA14N60P
- Mfr.Part #
- IXFA14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO263
- Stock
- 4,526
- In Stock :
- 4,526
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarHT™
- Number of Channels :
- 1 Channel
- Minimum Operating Temperature :
- - 55 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 42A
- Power Dissipation (Max) :
- 300W (Tc)
- Power Dissipation-Max :
- 300W Tc
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- Maximum Operating Temperature :
- + 150 C
- Tradename :
- HiPerFET
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-263 (IXFA)
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFA14
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 600V
- DS Breakdown Voltage-Min :
- 600 V
- Current Rating :
- 14A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 14 A
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Fall Time (Typ) :
- 26 ns
- Length :
- 9.9 mm
- Height :
- 4.5 mm
- Pin Count :
- 4
- Number of Terminals :
- 2
- Drain-source On Resistance-Max :
- 0.55 Ω
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 21 Weeks
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Resistance :
- 550mOhm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 70 ns
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- DRAIN
- Package :
- Tube
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Position :
- Single
- Product Status :
- Active
- Vgs (Max) :
- ±30V
- Width :
- 9.2 mm
- Power Dissipation :
- 300W
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- SMD/SMT
- Continuous Drain Current (ID) :
- 14A
- Power Dissipation-Max (Abs) :
- 300 W
- Transistor Polarity :
- N-Channel
- Rise Time :
- 27ns
- Brand :
- IXYS
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Number of Terminations :
- 2
- Surface Mount :
- yes
- JEDEC-95 Code :
- TO-263AB
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- RoHS :
- Details
- Published :
- 2008
- Voltage - Rated DC :
- 600V
- Number of Elements :
- 1
- Datasheets
- IXFA14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA14N60P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.14 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.Peak drain current for this device is 42A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFA14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXFA14N60P Applications
There are a lot of IXYS
IXFA14N60P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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