IRLHS6342TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.019nF

Drain to Source Breakdown Voltage :

30V

Published :

2013

Radiation Hardening :

No

Rds On Max :

15.5 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.1W

Turn On Delay Time :

4.9 ns

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 8.5A, 4.5V

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

8.7A

Package / Case :

6-PowerVDFN

Element Configuration :

Single

Min Operating Temperature :

-55°C

Fall Time (Typ) :

13 ns

Turn-Off Delay Time :

19 ns

Nominal Vgs :

1.1 V

Drain to Source Resistance :

15.5MOhm

Resistance :

15.5MOhm

Mount :

Surface Mount

Max Power Dissipation :

2.1W

Height :

950μm

Number of Elements :

1

Rise Time :

13ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

8.7A Ta 19A Tc

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1019pF @ 25V

FET Type :

N-Channel

Recovery Time :

17 ns

Series :

HEXFET®

RoHS Status :

RoHS Compliant

Length :

2.1mm

Packaging :

Cut Tape (CT)

Width :

2.1mm

Number of Pins :

6

Supplier Device Package :

6-PQFN (2x2)

Threshold Voltage :

1.1V

Gate to Source Voltage (Vgs) :

12V