IRLHS6242TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

950μm

Transistor Application :

SWITCHING

Turn On Delay Time :

5.8 ns

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Package / Case :

6-PowerVDFN

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Width :

2.1mm

Current - Continuous Drain (Id) @ 25°C :

10A Ta 12A Tc

Published :

2011

Nominal Vgs :

800 mV

Threshold Voltage :

800mV

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

10A

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Case Connection :

DRAIN

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

88A

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

9.6W

Fall Time (Typ) :

13 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Elements :

1

Rise Time :

15ns

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 8.5A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 10V

Length :

2.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Terminal Position :

Dual

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Vgs (Max) :

±12V

Power Dissipation-Max :

1.98W Ta 9.6W Tc

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Element Configuration :

Single

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC