IRL2910STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

55 ns

Dual Supply Voltage :

100V

Published :

2004

Resistance :

26mOhm

Length :

10.668mm

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Gate to Source Voltage (Vgs) :

16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED

REACH SVHC :

No SVHC

FET Type :

N-Channel

Height :

4.826mm

Vgs (Max) :

±16V

Power Dissipation-Max :

3.8W Ta 200W Tc

Rise Time :

100ns

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Width :

9.65mm

Nominal Vgs :

2 V

Turn On Delay Time :

11 ns

Current Rating :

55A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

520 mJ

JESD-609 Code :

e3

Power Dissipation :

200W

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

55A

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Lead Free :

Lead Free

Threshold Voltage :

2V

Rds On (Max) @ Id, Vgs :

26m Ω @ 29A, 10V

Series :

HEXFET®

Transistor Element Material :

SILICON

Voltage - Rated DC :

100V

Turn-Off Delay Time :

49 ns

ECCN Code :

EAR99

Number of Terminations :

2

Recovery Time :

350 ns

Mount :

Surface Mount