IRL2203NSPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.007Ohm

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Number of Elements :

1

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

75A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 180W Tc

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

400A

RoHS Status :

ROHS3 Compliant

Published :

2004

Number of Terminations :

2

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

116A Tc

Avalanche Energy Rating (Eas) :

290 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

7m Ω @ 60A, 10V