IRL2203NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Avalanche Energy Rating (Eas) :

290 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

116A Tc

Drain Current-Max (Abs) (ID) :

75A

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 180W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain-source On Resistance-Max :

0.007Ohm

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

7m Ω @ 60A, 10V

Published :

2004

RoHS Status :

ROHS3 Compliant