IRL2203NSTRLPBF
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- Mfr.Part #
- IRL2203NSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 116A D2PAK
- Stock
- 6,447
- In Stock ：
- 6,447
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3290pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Resistance :
- 7mOhm
- Published :
- 2010
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Terminations :
- 2
- Series :
- HEXFET®
- Power Dissipation-Max :
- 3.8W Ta 180W Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 400A
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 4.572mm
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 116A
- RoHS Status :
- ROHS3 Compliant
- Dual Supply Voltage :
- 30V
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Voltage - Rated DC :
- 30V
- Factory Lead Time :
- 12 Weeks
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 60A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead, Lead Free
- Termination :
- SMD/SMT
- Turn On Delay Time :
- 11 ns
- Threshold Voltage :
- 3V
- Case Connection :
- DRAIN
- Nominal Vgs :
- 3 V
- Drain Current-Max (Abs) (ID) :
- 75A
- Length :
- 10.668mm
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 116A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 16V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- ECCN Code :
- EAR99
- Current Rating :
- 116A
- Number of Pins :
- 3
- Rise Time :
- 160ns
- Turn-Off Delay Time :
- 23 ns
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 66 ns
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Width :
- 9.65mm
- JESD-609 Code :
- e3
- Power Dissipation :
- 170W
- Recovery Time :
- 84 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 4.5V
- Datasheets
- IRL2203NSTRLPBF
N-Channel Tape & Reel (TR) 7m Ω @ 60A, 10V ±16V 3290pF @ 25V 60nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL2203NSTRLPBF Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3290pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 116A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 75A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRL2203NSTRLPBF Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 116A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.
a threshold voltage of 3V
IRL2203NSTRLPBF Applications
There are a lot of Infineon Technologies
IRL2203NSTRLPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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