IRL2203NPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

116A Tc

Series :

HEXFET®

Rise Time :

160ns

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

7m Ω @ 60A, 10V

Voltage - Rated DC :

30V

Turn On Delay Time :

11 ns

Number of Pins :

3

Avalanche Energy Rating (Eas) :

290 mJ

Mount :

Through Hole

Package / Case :

TO-220-3

Height :

15.24mm

Mounting Type :

Through Hole

Resistance :

7mOhm

Recovery Time :

84 ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

FET Type :

N-Channel

Current Rating :

116A

Lead Pitch :

2.54mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2001

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation :

130W

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Length :

10.5156mm

Power Dissipation-Max :

180W Tc

Turn-Off Delay Time :

23 ns

Dual Supply Voltage :

30V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 250μA

Pulsed Drain Current-Max (IDM) :

400A

Continuous Drain Current (ID) :

116A

Nominal Vgs :

1 V

Contact Plating :

Tin

Width :

4.69mm

Number of Terminations :

3

Vgs (Max) :

±16V

Lead Free :

Contains Lead, Lead Free

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

16V

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Transistor Application :

SWITCHING

Packaging :

Tube

Drain to Source Breakdown Voltage :

30V

Termination :

Through Hole

Radiation Hardening :

No

Fall Time (Typ) :

66 ns