IRL2505PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Turn On Delay Time :

12 ns

Drain to Source Breakdown Voltage :

55V

Factory Lead Time :

12 Weeks

Termination :

Through Hole

Fall Time (Typ) :

84 ns

Recovery Time :

210 ns

Gate to Source Voltage (Vgs) :

16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

160ns

Power Dissipation :

200W

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

104A Tc

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Height :

15.24mm

Width :

4.69mm

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Qualification Status :

Not Qualified

Threshold Voltage :

2V

Published :

2004

Vgs (Max) :

±16V

Nominal Vgs :

2 V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Power Dissipation-Max :

200W Tc

Element Configuration :

Single

Turn-Off Delay Time :

43 ns

Lead Free :

Lead Free

Current Rating :

104A

Number of Terminations :

3

Continuous Drain Current (ID) :

104A

Voltage - Rated DC :

55V

Dual Supply Voltage :

55V

Transistor Application :

SWITCHING

Length :

10.5156mm

Drain Current-Max (Abs) (ID) :

90A

Resistance :

8mOhm

Series :

HEXFET®

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 5V

Rds On (Max) @ Id, Vgs :

8m Ω @ 54A, 10V

Mount :

Through Hole

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC