IRL2203NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

116A Tc

Mounting Type :

Through Hole

Height :

15.24mm

REACH SVHC :

No SVHC

Length :

10.5156mm

Gate to Source Voltage (Vgs) :

16V

Drain Current-Max (Abs) (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Lead Pitch :

2.54mm

Contact Plating :

Tin

FET Type :

N-Channel

Power Dissipation-Max :

180W Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

400A

Turn-Off Delay Time :

23 ns

Termination :

Through Hole

Power Dissipation :

130W

Series :

HEXFET®

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Recovery Time :

84 ns

Resistance :

7mOhm

Turn On Delay Time :

11 ns

Threshold Voltage :

1V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

116A

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs (Max) :

±16V

Published :

2001

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

7m Ω @ 60A, 10V

Fall Time (Typ) :

66 ns

Lead Free :

Contains Lead, Lead Free

Case Connection :

DRAIN

Number of Pins :

3

Width :

4.69mm

Transistor Application :

SWITCHING

Nominal Vgs :

1 V

Vgs(th) (Max) @ Id :

1V @ 250μA

Avalanche Energy Rating (Eas) :

290 mJ

Current Rating :

116A

Radiation Hardening :

No

Element Configuration :

Single

Rise Time :

160ns

Number of Elements :

1

Dual Supply Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Through Hole

Packaging :

Tube

Voltage - Rated DC :

30V

Factory Lead Time :

14 Weeks