IRL2203NSTRRPBF
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- Mfr.Part #
- IRL2203NSTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 116A D2PAK
- Stock
- 5,277
- In Stock ：
- 5,277
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Supplier Device Package :
- D2PAK
- Drain to Source Breakdown Voltage :
- 30V
- Current Rating :
- 116A
- Gate to Source Voltage (Vgs) :
- 16V
- Rds On Max :
- 7 mΩ
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 3.29nF
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 23 ns
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 116A
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 66 ns
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±16V
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 4.5V
- Series :
- HEXFET®
- Power Dissipation :
- 170W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 60A, 10V
- Number of Pins :
- 3
- Turn On Delay Time :
- 11 ns
- Drain to Source Resistance :
- 10MOhm
- Rise Time :
- 160ns
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 3.8W Ta 180W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 116A Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3290pF @ 25V
- Published :
- 2007
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- Voltage - Rated DC :
- 30V
- Mount :
- Surface Mount
- Max Operating Temperature :
- 175°C
- Datasheets
- IRL2203NSTRRPBF
N-Channel Tape & Reel (TR) 7mOhm @ 60A, 10V ±16V 3290pF @ 25V 60nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL2203NSTRRPBF Overview
The maximum input capacitance of this device is 3290pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 116A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 23 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 10mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRL2203NSTRRPBF Features
a continuous drain current (ID) of 116A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 10mOhm
a 30V drain to source voltage (Vdss)
IRL2203NSTRRPBF Applications
There are a lot of Infineon Technologies
IRL2203NSTRRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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