IRL2910STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.03Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

520 mJ

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

55A

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Qualification Status :

Not Qualified

Number of Terminations :

2

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

26m Ω @ 29A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Published :

1998

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

190A

Terminal Position :

Single

Surface Mount :

yes

Vgs (Max) :

±16V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation-Max :

3.8W Ta 200W Tc

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN