IRL2910SPBF
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- Mfr.Part #
- IRL2910SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 55A D2PAK
- Stock
- 2,186
- In Stock ：
- 2,186
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 14 Weeks
- Published :
- 2003
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 5V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 100V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Series :
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 3.8W Ta 200W Tc
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 29A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Datasheets
- IRL2910SPBF
N-Channel Tube 26m Ω @ 29A, 10V ±16V 3700pF @ 25V 140nC @ 5V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP60N55F3 Description
STP60N55F3 is a 55v N-channel STripFET? III Power MOSFET. This STripFET? III Power MOSFET STP60N55F3 technology is among the latest improvements, which have been specially tailored to minimize on-state resistance providing superior switching performances. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STP60N55F3 is in the TO-220 package with 110W power dissipation.
STP60N55F3 Features
-
Standard threshold drive
-
100% avalanche tested
-
Drain-source voltage (VGS=0):55V
-
Gate-source voltage: ±20V
-
Drain current (continuous) at TC = 25°C: 80A
STP60N55F3 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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