IRL2703S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Published :

1996

Pulsed Drain Current-Max (IDM) :

96A

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.04Ohm

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

FET Type :

N-Channel

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Surface Mount :

yes

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

24A

Rds On (Max) @ Id, Vgs :

40m Ω @ 14A, 10V

Mounting Type :

Surface Mount

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Transistor Element Material :

SILICON

Power Dissipation-Max :

45W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Vgs(th) (Max) @ Id :

1V @ 250μA

DS Breakdown Voltage-Min :

30V

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

77 mJ

Terminal Finish :

MATTE TIN OVER NICKEL

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE