IRGIB6B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Max Power Dissipation :

38W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current Rating :

13A

JEDEC-95 Code :

TO-220AB

Test Condition :

400V, 5A, 100 Ω, 15V

Number of Elements :

1

Gate Charge :

18.2nC

Gate-Emitter Voltage-Max :

20V

Fall Time-Max (tf) :

27ns

Polarity/Channel Type :

N-Channel

Switching Energy :

110μJ (on), 135μJ (off)

Gate-Emitter Thr Voltage-Max :

5.5V

Published :

2004

Factory Lead Time :

16 Weeks

Case Connection :

Isolated

Radiation Hardening :

No

Width :

4.8006mm

Max Collector Current :

11A

Lead Free :

Lead Free

Power Dissipation :

38W

Length :

10.5918mm

Rise Time :

17ns

Turn On Time :

45 ns

Operating Temperature :

-55°C~175°C TJ

Td (on/off) @ 25°C :

25ns/215ns

ECCN Code :

EAR99

Number of Terminations :

3

Mount :

Through Hole

IGBT Type :

NPT

Mounting Type :

Through Hole

Transistor Application :

Motor Control

Element Configuration :

Single

Number of Pins :

3

Height :

16.002mm

Packaging :

Tube

Current - Collector Pulsed (Icm) :

22A

Reverse Recovery Time :

70 ns

Weight :

2.299997g

Turn Off Time-Nom (toff) :

258 ns

Collector Emitter Saturation Voltage :

1.8V

Collector Emitter Breakdown Voltage :

600V

Voltage - Rated DC :

600V

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 5A

REACH SVHC :

No SVHC

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

2.2V

Package / Case :

TO-220-3 Full Pack