IRGBC30S
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- Mfr.Part #
- IRGBC30S
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT STD 600V 34A TO-220AB
- Stock
- 16,604
- In Stock ：
- 16,604
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Supplier Device Package :
- TO-220AB
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 34A
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 18A
- Published :
- 1996
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 100W
- Input Type :
- Standard
- Package / Case :
- TO-220-3
- Datasheets
- IRGBC30S
IRGBC30S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGBC30S Description
With a voltage of 600V, the IRGBC30S is an insulated Gate Bipolar Transistor from Infineon Technologies. IRGBC30S has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 100W. International Rectifier's Insulated Gate Bipolar Transistors (IGBTs) feature better useable current densities than comparable bipolar transistors while requiring less gate drive than the more familiar power MOSFET. They provide significant advantages in a variety of high-voltage, high-current applications.
IRGBC30S Features
-
The switching-loss rating includes all "tail" losses
-
Optimized for line frequency operation ( to 400 Hz)
IRGBC30S Applications
-
General-purpose amplifier
-
Switching applications
-
Power management
-
Industrial
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