IRGBC30F

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Mfr.Part #
IRGBC30F
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT FAST 600V 31A TO-220AB
Stock
29,105
In Stock :
29,105

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Transistor Application :
Motor Control
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
3
Current - Collector (Ic) (Max) :
31A
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-220AB
Terminal Position :
Single
Voltage - Collector Emitter Breakdown (Max) :
600V
Power - Max :
100W
RoHS Status :
Non-RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Type :
Standard
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature :
Fast
JESD-30 Code :
R-PSFM-T3
Published :
1996
Power Dissipation-Max (Abs) :
100W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Packaging :
Tube
Gate-Emitter Voltage-Max :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate-Emitter Thr Voltage-Max :
5.5V
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 17A
Surface Mount :
No
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Datasheets
IRGBC30F
Introducing Transistors - IGBTs - Single Infineon Technologies IRGBC30F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IRGBC30F pinout, IRGBC30F datasheet PDF, IRGBC30F amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGBC30F ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGBC30F


IRGBC30F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGBC30F IGBT Description


This Insulated Gate Bipolar Transistors (IGBT) IRGBC30F from Infineon have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. It provides substantial benefits to a host of high-voltage, high-current applications. It has low switching losses and low EMI.



IRGBC30F IGBT Features


Optimized for medium operating frequency ( 1 to 10kHz)

Collector-Emitter Breakdown Voltage: 600 V

Gate-Emitter Voltage: ±20 V

Low switching losses

Continuous Collector Current: 31 A (@ 25℃)



IRGBC30F IGBT Applications


Solar Inverter

General Motor Driver

PFC

Oil Pump

PTC Heater

Welder

HVAC Systems

Switching Device

UPS


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