IRGB8B60KPBF
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- Mfr.Part #
- IRGB8B60KPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 28A 167W TO220AB
- Stock
- 4,611
- In Stock ：
- 4,611
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Published :
- 2003
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Gate-Emitter Voltage-Max :
- 20V
- Current Rating :
- 28A
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Rise Time :
- 21ns
- Length :
- 10.54mm
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.69mm
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 600V
- Collector Emitter Saturation Voltage :
- 2.2V
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Termination :
- Through Hole
- Number of Pins :
- 3
- Transistor Application :
- Motor Control
- IGBT Type :
- NPT
- Power Dissipation :
- 167W
- Lead Free :
- Lead Free
- Height :
- 8.77mm
- Mount :
- Through Hole
- Turn On Time :
- 43 ns
- Factory Lead Time :
- 16 Weeks
- Max Collector Current :
- 28A
- Switching Energy :
- 160μJ (on), 160μJ (off)
- Gate Charge :
- 18.2nC
- Td (on/off) @ 25°C :
- 23ns/140ns
- Max Power Dissipation :
- 167W
- Fall Time-Max (tf) :
- 56ns
- Input Type :
- Standard
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Turn Off Time-Nom (toff) :
- 220 ns
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Current - Collector Pulsed (Icm) :
- 26A
- Transistor Element Material :
- SILICON
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 8A
- Number of Elements :
- 1
- Datasheets
- IRGB8B60KPBF
IRGB8B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB8B60KPBF Description
The Infineon Technologies IRGB8B60KPBF is an insulated gate bipolar transistor.
IRGB8B60KPBF Features
-
Low VCE (on) Non-Punch Through IGBT Technology.
-
10μs Short Circuit Capability.
-
Square RBSOA.
-
Positive VCE (on) Temperature Coefficient.
-
Lead-Free.
-
Benchmark Efficiency for Motor Control.
-
Rugged Transient Performance.
-
Low EMI.
-
Excellent Current Sharing in Parallel Operation
IRGB8B60KPBF Applications
-
Motor Control
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