IRGB6B60KPBF
- Mfr.Part #
- IRGB6B60KPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT, 13A I(C), 600V V(BR)CES, N
- Stock
- 43,779
- In Stock :
- 43,779
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Height :
- 8.77mm
- Turn Off Time-Nom (toff) :
- 258 ns
- Collector Emitter Saturation Voltage :
- 1.8V
- Published :
- 2004
- Termination :
- Through Hole
- Element Configuration :
- Single
- Rise Time :
- 17ns
- Input Type :
- Standard
- Switching Energy :
- 110μJ (on), 135μJ (off)
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- 13A
- Length :
- 10.54mm
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 5A
- Number of Elements :
- 1
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Width :
- 4.69mm
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Power Dissipation :
- 90W
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 90W
- Mount :
- Through Hole
- IGBT Type :
- NPT
- Case Connection :
- COLLECTOR
- Transistor Application :
- Motor Control
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 25ns/215ns
- Max Collector Current :
- 13A
- Packaging :
- Tube
- Radiation Hardening :
- No
- Turn On Time :
- 45 ns
- Voltage - Rated DC :
- 600V
- Gate Charge :
- 18.2nC
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 16 Weeks
- Number of Terminations :
- 3
- Current - Collector Pulsed (Icm) :
- 26A
- Datasheets
- IRGB6B60KPBF
IRGB6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB6B60KPBF Description
IRGB6B60KPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGB6B60KPBF IGBT delivers rugged transient performance and low EMI.
IRGB6B60KPBF Features
Low EMI
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGB6B60KPBF Applications
UPS
Motor control
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