IRGB6B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

16 Weeks

Test Condition :

400V, 5A, 100 Ω, 15V

Case Connection :

COLLECTOR

Mount :

Through Hole

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

90W

Gate-Emitter Thr Voltage-Max :

5.5V

Lead Free :

Lead Free

Switching Energy :

110μJ (on), 135μJ (off)

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 5A

Mounting Type :

Through Hole

Element Configuration :

Single

Number of Pins :

3

Max Collector Current :

13A

Input Type :

Standard

Current Rating :

13A

Gate-Emitter Voltage-Max :

20V

REACH SVHC :

No SVHC

Transistor Application :

Motor Control

Reverse Recovery Time :

70 ns

Published :

2004

Width :

4.69mm

Voltage - Rated DC :

600V

Fall Time-Max (tf) :

27ns

Turn On Time :

45 ns

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

2.2V

Package / Case :

TO-220-3

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

258 ns

Packaging :

Tube

Length :

10.54mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

Through Hole

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1.8V

Max Power Dissipation :

90W

Td (on/off) @ 25°C :

25ns/215ns

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

600V

Rise Time :

17ns

Number of Terminations :

3

IGBT Type :

NPT

Height :

15.24mm

Current - Collector Pulsed (Icm) :

26A

Gate Charge :

18.2nC