IRGB5B120KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 6A

Collector Emitter Breakdown Voltage :

1.2kV

Input Type :

Standard

Turn-Off Delay Time :

100 ns

Max Power Dissipation :

89W

Package / Case :

TO-220-3

Width :

4.69mm

Switching Energy :

390μJ (on), 330μJ (off)

Current Rating :

12A

Collector Emitter Saturation Voltage :

2V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Factory Lead Time :

16 Weeks

Reverse Recovery Time :

160 ns

Td (on/off) @ 25°C :

22ns/100ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Element Configuration :

Single

Current - Collector (Ic) (Max) :

12A

Current - Collector Pulsed (Icm) :

24A

Collector Emitter Voltage (VCEO) :

3V

RoHS Status :

RoHS Compliant

Length :

10.5156mm

Published :

2004

Height :

15.24mm

Packaging :

Tube

Gate Charge :

25nC

Power - Max :

89W

IGBT Type :

NPT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

12A

Mounting Type :

Through Hole

Mount :

Through Hole

Test Condition :

600V, 6A, 50Ohm, 15V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Radiation Hardening :

No

Turn On Delay Time :

22 ns

Number of Pins :

3

Rise Time :

19ns

Lead Free :

Lead Free

Power Dissipation :

89W

Supplier Device Package :

TO-220AB

Voltage - Rated DC :

1.2kV