IRGB4B60KPBF
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- Mfr.Part #
- IRGB4B60KPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 12A 63W TO220A
- Stock
- 4,576
- In Stock ：
- 4,576
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 12nC
- Height :
- 15.24mm
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Element Configuration :
- Single
- Max Power Dissipation :
- 63W
- Transistor Application :
- Motor Control
- Turn On Time :
- 40 ns
- Factory Lead Time :
- 11 Weeks
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 24A
- Collector Emitter Voltage (VCEO) :
- 2.5V
- Rise Time :
- 18ns
- Packaging :
- Tube
- Turn Off Time-Nom (toff) :
- 199 ns
- Mounting Type :
- Through Hole
- Fall Time-Max (tf) :
- 89ns
- Collector Emitter Saturation Voltage :
- 2.5V
- Number of Terminations :
- 3
- Current Rating :
- 12A
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 12A
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Voltage - Rated DC :
- 600V
- Switching Energy :
- 130μJ (on), 83μJ (off)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 63W
- Length :
- 10.5156mm
- Operating Temperature :
- -55°C~175°C TJ
- Polarity/Channel Type :
- N-Channel
- Td (on/off) @ 25°C :
- 22ns/100ns
- Gate-Emitter Voltage-Max :
- 20V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 4A
- Width :
- 4.699mm
- RoHS Status :
- RoHS Compliant
- IGBT Type :
- NPT
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Published :
- 2004
- Test Condition :
- 400V, 4A, 100 Ω, 15V
- Radiation Hardening :
- No
- Input Type :
- Standard
- Datasheets
- IRGB4B60KPBF
IRGB4B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB4B60KPBF Description
The IRGB4B60KPBF is an IGBT NPT 600 V 12 A 63 W Through Hole TO-220AB. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRGB4B60KPBF Features
-
Positive VCE (on) Temperature Coefficient.
-
Maximum Junction Temperature rated at 175°C.
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TO-220 is available in PbF as a Lead-Free.
-
Low VCE (on) Non Punch Through IGBT Technology.
-
10μs Short Circuit Capability.
-
Square RBSOA.
IRGB4B60KPBF Applications
-
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
-
It is used in UPS (Uninterruptible Power Supply) system.
-
It is used in AC and DC motor drives offering speed control.
-
It is used in chopper and inverters.
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It is used in solar inverters.
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