IRGB4B60KD1PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Mounting Type :

Through Hole

Packaging :

Tube

Gate Charge :

12nC

Power Dissipation :

63W

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

2.5V

ECCN Code :

EAR99

Max Collector Current :

11A

Factory Lead Time :

16 Weeks

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Fall Time-Max (tf) :

89ns

Package / Case :

TO-220-3

Max Power Dissipation :

63W

Current - Collector Pulsed (Icm) :

22A

Collector Emitter Breakdown Voltage :

600V

Case Connection :

COLLECTOR

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Turn On Time :

40 ns

IGBT Type :

NPT

Transistor Application :

Motor Control

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

5.5V

Height :

15.24mm

Switching Energy :

73μJ (on), 47μJ (off)

Published :

2003

Additional Feature :

ULTRA FAST SOFT RECOVERY

Td (on/off) @ 25°C :

22ns/100ns

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

2.5V

Width :

4.69mm

Rise Time :

18ns

Number of Pins :

3

Turn Off Time-Nom (toff) :

199 ns

Reverse Recovery Time :

93 ns

Number of Elements :

1

Test Condition :

400V, 4A, 100 Ω, 15V

Length :

10.5156mm

Current Rating :

11A

Gate-Emitter Voltage-Max :

20V

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

600V