IRGB4B60KD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

73μJ (on), 47μJ (off)

Collector Emitter Voltage (VCEO) :

2.5V

Length :

10.5156mm

Input Type :

Standard

Transistor Application :

Motor Control

Height :

15.24mm

Td (on/off) @ 25°C :

22ns/100ns

Gate Charge :

12nC

Published :

2003

Mounting Type :

Through Hole

Lead Free :

Lead Free

Gate-Emitter Thr Voltage-Max :

5.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

NPT

Turn On Time :

40 ns

Collector Emitter Saturation Voltage :

2.5V

Number of Terminations :

3

Fall Time-Max (tf) :

89ns

Operating Temperature :

-55°C~175°C TJ

Test Condition :

400V, 4A, 100 Ω, 15V

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

600V

Rise Time :

18ns

Voltage - Rated DC :

600V

Case Connection :

COLLECTOR

Number of Elements :

1

Power Dissipation :

63W

Additional Feature :

ULTRA FAST SOFT RECOVERY

Width :

4.69mm

Current - Collector Pulsed (Icm) :

22A

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3

Reverse Recovery Time :

93 ns

Current Rating :

11A

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Element Configuration :

Single

Number of Pins :

3

Packaging :

Tube

Radiation Hardening :

No

Max Collector Current :

11A

Turn Off Time-Nom (toff) :

199 ns

Max Power Dissipation :

63W

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Mount :

Through Hole