IRGB4630DPBF

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Mfr.Part #
IRGB4630DPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 47A TO220AC
Stock
147
In Stock :
147

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Number of Pins :
3
Reverse Recovery Time :
100 ns
Test Condition :
400V, 18A, 22 Ω, 15V
Input Type :
Standard
Max Power Dissipation :
206W
Length :
10.67mm
Height :
16.51mm
Mounting Type :
Through Hole
Switching Energy :
95μJ (on), 350μJ (off)
Package / Case :
TO-220-3
Element Configuration :
Single
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
2.15V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Collector Current :
47A
Power - Max :
206W
Width :
4.83mm
Current - Collector Pulsed (Icm) :
54A
Operating Temperature :
-40°C~175°C TJ
Mount :
Through Hole
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge :
35nC
Td (on/off) @ 25°C :
40ns/105ns
Published :
2013
Factory Lead Time :
16 Weeks
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 18A
Collector Emitter Voltage (VCEO) :
1.95V
Collector Emitter Breakdown Voltage :
600V
Packaging :
Tube
Datasheets
IRGB4630DPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGB4630DPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-40°C~175°C TJ, IRGB4630DPBF pinout, IRGB4630DPBF datasheet PDF, IRGB4630DPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGB4630DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGB4630DPBF


IRGB4630DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGB4630DPBF Description


IRGB4630DPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tight distribution of parameters. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.



IRGB4630DPBF Features


Square RBSOA

Positive VCE(ON) temperature coefficient

Low VCE(ON) and switching losses

Maximum junction temperature 175°C

5μs short circuit SOA



IRGB4630DPBF Applications


 Industrial motor drive

Inverters

UPS

Welding 


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