IRGB4607DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

12A

Width :

4.83mm

REACH SVHC :

No SVHC

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

58W

Switching Energy :

140μJ (on), 62μJ (off)

Transistor Application :

POWER CONTROL

Weight :

2.299997g

Test Condition :

400V, 4A, 100 Ω, 15V

Height :

16.51mm

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1.75V

ECCN Code :

EAR99

Reverse Recovery Time :

48 ns

JEDEC-95 Code :

TO-220AB

Length :

10.67mm

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Packaging :

Tube

Case Connection :

COLLECTOR

Power - Max :

58W

Number of Elements :

1

Max Collector Current :

11A

Turn Off Time-Nom (toff) :

95 ns

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 4A

Factory Lead Time :

6 Weeks

Package / Case :

TO-220-3

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~175°C TJ

Collector Emitter Voltage (VCEO) :

2.05V

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

27ns/120ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge :

9nC

Turn On Time :

51 ns

Input Type :

Standard

Published :

2013

Number of Pins :

3